US Patent Class 438-- SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

US Patent Class 438
SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

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Current as of: June, 1999
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	DF	CLASS NOTES
1	DF	HAVING BIOMATERIAL COMPONENT OR INTEGRATED WITH LIVING ORGANISM
2	DF	HAVING SUPERCONDUCTIVE COMPONENT
3	DF	HAVING MAGNETIC OR FERROELECTRIC COMPONENT
4	DF	REPAIR OR RESTORATION
5	DF	INCLUDING CONTROL RESPONSIVE TO SENSED CONDITION
6	DF	.~ Interconnecting plural devices on semiconductor substrate
7	DF	.~ Optical characteristic sensed
8	DF	.~.~ Chemical etching
9	DF	.~.~.~ Plasma etching
10	DF	.~ Electrical characteristic sensed
11	DF	.~.~ Utilizing integral test element
12	DF	.~.~ And removal of defect
13	DF	.~.~ Altering electrical property by material removal
14	DF	WITH MEASURING OR TESTING
15	DF	.~ Packaging (e.g., with mounting, encapsulating, etc.) or treatment of packaged semiconductor
16	DF	.~ Optical characteristic sensed
17	DF	.~ Electrical characteristic sensed
18	DF	.~.~ Utilizing integral test element
19	DF	HAVING INTEGRAL POWER SOURCE (E.G., BATTERY, ETC.)
20	DF	ELECTRON EMITTER MANUFACTURE
21	DF	MANUFACTURE OF ELECTRICAL DEVICE CONTROLLED PRINTHEAD
22	DF	MAKING DEVICE OR CIRCUIT EMISSIVE OF NONELECTRICAL SIGNAL
23	DF	.~ Having diverse electrical device
24	DF	.~.~ Including device responsive to nonelectrical signal
25	DF	.~.~.~ Packaging (e.g., with mounting, encapsulating, etc.) or treatment of packaged semiconductor
26	DF	.~ Packaging (e.g., with mounting, encapsulating, etc.) or treatment of packaged semiconductor
27	DF	.~.~ Having additional optical element (e.g., optical fiber, etc.)
28	DF	.~.~ Plural emissive devices
29	DF	.~ Including integrally formed optical element (e.g., reflective layer, luminescent material, contoured surface, etc.)
30	DF	.~.~ Liquid crystal component
31	DF	.~.~ Optical waveguide structure
32	DF	.~.~ Optical grating structure
33	DF	.~ Substrate dicing
34	DF	.~ Making emissive array
35	DF	.~.~ Multiple wavelength emissive
36	DF	.~ Ordered or disordered
37	DF	.~ Graded composition
38	DF	.~ Passivating of surface
39	DF	.~ Mesa formation
40	DF	.~.~ Tapered etching
41	DF	.~.~ With epitaxial deposition of semiconductor adjacent mesa
42	DF	.~ Groove formation
43	DF	.~.~ Tapered etching
44	DF	.~.~ With epitaxial deposition of semiconductor in groove
45	DF	.~ Dopant introduction into semiconductor region
46	DF	.~ Compound semiconductor
47	DF	.~.~ Heterojunction
48	DF	MAKING DEVICE OR CIRCUIT RESPONSIVE TO NONELECTRICAL SIGNAL
49	DF	.~ Chemically responsive
50	DF	.~ Physical stress responsive
51	DF	.~.~ Packaging (e.g., with mounting, encapsulating, etc.) or treatment of packaged semiconductor
52	DF	.~.~ Having cantilever element
53	DF	.~.~ Having diaphragm element
54	DF	.~ Thermally responsive
55	DF	.~.~ Packaging (e.g., with mounting, encapsulating, etc.) or treatment of packaged semiconductor
56	DF	.~ Responsive to corpuscular radiation (e.g., nuclear particle detector, etc.)
57	DF	.~ Responsive to electromagnetic radiation
58	DF	.~.~ Gettering of substrate
59	DF	.~.~ Having diverse electrical device
60	DF	.~.~.~ Charge transfer device (e.g., CCD, etc.)
61	DF	.~.~ Continuous processing
62	DF	.~.~.~ Using running length substrate
63	DF	.~.~ Particulate semiconductor component
64	DF	.~.~ Packaging (e.g., with mounting, encapsulating, etc.) or treatment of packaged semiconductor
65	DF	.~.~.~ Having additional optical element (e.g., optical fiber, etc.)
66	DF	.~.~.~ Plural responsive devices (e.g., array, etc.)
67	DF	.~.~.~.~ Assembly of plural semiconductor substrates
68	DF	.~.~ Substrate dicing
69	DF	.~.~ Including integrally formed optical element (e.g., reflective layer, luminescent layer, etc.)
70	DF	.~.~.~ Color filter
71	DF	.~.~.~ Specific surface topography (e.g., textured surface, etc.)
72	DF	.~.~.~ Having reflective or antireflective component
73	DF	.~.~ Making electromagnetic responsive array
74	DF	.~.~.~ Vertically arranged (e.g., tandem, stacked, etc.)
75	DF	.~.~.~ Charge transfer device (e.g., CCD, etc.)
76	DF	.~.~.~.~ Majority signal carrier (e.g., buried or bulk channel, peristaltic, etc.)
77	DF	.~.~.~.~ Compound semiconductor
78	DF	.~.~.~.~ Having structure to improve output signal (e.g., exposure control structure, etc.)
79	DF	.~.~.~.~.~ Having blooming suppression structure (e.g., antiblooming drain, etc.)
80	DF	.~.~.~ Lateral series connected array
81	DF	.~.~.~.~ Specified shape junction barrier (e.g., V-grooved junction, etc.)
82	DF	.~.~ Having organic semiconductor component
83	DF	.~.~ Forming point contact
84	DF	.~.~ Having selenium or tellurium elemental semiconductor component
85	DF	.~.~ Having metal oxide or copper sulfide compound semiconductive component
86	DF	.~.~.~ And cadmium sulfide compound semiconductive component
87	DF	.~.~ Graded composition
88	DF	.~.~ Direct application of electric current
89	DF	.~.~ Fusion or solidification of semiconductor region
90	DF	.~.~ Including storage of electrical charge in substrate
91	DF	.~.~ Avalanche diode
92	DF	.~.~ Schottky barrier junction
93	DF	.~.~ Compound semiconductor
94	DF	.~.~.~ Heterojunction
95	DF	.~.~.~ Chalcogen (i.e., oxygen (O), sulfur (S), selenium (Se), tellurium (Te)) containing
96	DF	.~.~ Amorphous semiconductor
97	DF	.~.~ Polycrystalline semiconductor
98	DF	.~.~ Contact formation (i.e., metallization)
99	DF	HAVING ORGANIC SEMICONDUCTIVE COMPONENT
100	DF	MAKING POINT CONTACT DEVICE
101	DF	.~ Direct application of electrical current
102	DF	HAVING SELENIUM OR TELLURIUM ELEMENTAL SEMICONDUCTOR COMPONENT
103	DF	.~ Direct application of electrical current
104	DF	HAVING METAL OXIDE OR COPPER SULFIDE COMPOUND SEMICONDUCTOR COMPONENT
105	DF	HAVING DIAMOND SEMICONDUCTOR COMPONENT
106	DF	PACKAGING (E.G., WITH MOUNTING, ENCAPSULATING, ETC.) OR TREATMENT OF PACKAGED SEMICONDUCTOR
107	DF	.~ Assembly of plural semiconductive substrates each possessing electrical device
108	DF	.~.~ Flip-chip-type assembly
109	DF	.~.~ Stacked array (e.g., rectifier, etc.)
110	DF	.~ Making plural separate devices
111	DF	.~.~ Using strip lead frame
112	DF	.~.~.~ And encapsulating
113	DF	.~.~ Substrate dicing
114	DF	.~.~.~ Utilizing a coating to perfect the dicing
115	DF	.~ Including contaminant removal or mitigation
116	DF	.~ Having light transmissive window
117	DF	.~ Incorporating resilient component (e.g., spring, etc.)
118	DF	.~ Including adhesive bonding step
119	DF	.~.~ Electrically conductive adhesive
120	DF	.~ With vibration step
121	DF	.~ Metallic housing or support
122	DF	.~.~ Possessing thermal dissipation structure (i.e., heat sink)
123	DF	.~.~ Lead frame
124	DF	.~.~ And encapsulating
125	DF	.~ Insulative housing or support
126	DF	.~.~ And encapsulating
127	DF	.~ Encapsulating
128	DF	MAKING DEVICE ARRAY AND SELECTIVELY INTERCONNECTING
129	DF	.~ With electrical circuit layout
130	DF	.~ Rendering selected devices operable or inoperable
131	DF	.~ Using structure alterable to conductive state (i.e., antifuse)
132	DF	.~ Using structure alterable to nonconductive state (i.e., fuse)
133	DF	MAKING REGENERATIVE-TYPE SWITCHING DEVICE (E.G., SCR, IGBT, THYRISTOR, ETC.)
134	DF	.~ Bidirectional rectifier with control electrode (e.g., triac, diac, etc.)
135	DF	.~ Having field effect structure
136	DF	.~.~ Junction gate
137	DF	.~.~.~ Vertical channel
138	DF	.~.~ Vertical channel
139	DF	.~ Altering electrical characteristic
140	DF	.~ Having structure increasing breakdown voltage (e.g., guard ring, field plate, etc.)
141	DF	MAKING CONDUCTIVITY MODULATION DEVICE (E.G., UNIJUNCTION TRANSISTOR, DOUBLE BASE DIODE, CONDUCTIVITY-MODULATED TRANSISTOR, ETC.)
142	DF	MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS
143	DF	.~ Gettering of semiconductor substrate
144	DF	.~ Charge transfer device (e.g., CCD, etc.)
145	DF	.~.~ Having additional electrical device
146	DF	.~.~ Majority signal carrier (e.g., buried or bulk channel, peristaltic, etc.)
147	DF	.~.~ Changing width or direction of channel (e.g., meandering channel, etc.)
148	DF	.~.~ Substantially incomplete signal charge transfer (e.g., bucket brigade, etc.)
149	DF	.~ On insulating substrate or layer (e.g., TFT, etc.)
150	DF	.~.~ Specified crystallographic orientation
151	DF	.~.~ Having insulated gate
152	DF	.~.~.~ Combined with electrical device not on insulating substrate or layer
153	DF	.~.~.~.~ Complementary field effect transistors
154	DF	.~.~.~ Complementary field effect transistors
155	DF	.~.~.~ And additional electrical device on insulating substrate or layer
156	DF	.~.~.~ Vertical channel
157	DF	.~.~.~ Plural gate electrodes (e.g., dual gate, etc.)
158	DF	.~.~.~ Inverted transistor structure
159	DF	.~.~.~.~ Source-to-gate or drain-to-gate overlap
160	DF	.~.~.~.~ Utilizing backside irradiation
161	DF	.~.~.~ Including source or drain electrode formation prior to semiconductor layer formation (i.e., staggered electrodes)
162	DF	.~.~.~ Introduction of nondopant into semiconductor layer
163	DF	.~.~.~ Adjusting channel dimension (e.g., providing lightly doped source or drain region, etc.)
164	DF	.~.~.~ Semiconductor islands formed upon insulating substrate or layer (e.g., mesa formation, etc.)
165	DF	.~.~.~.~ Including differential oxidation
166	DF	.~.~.~ Including recrystallization step
167	DF	.~ Having Schottky gate (e.g., MESFET, HEMT, etc.)
168	DF	.~.~ Specified crystallographic orientation
169	DF	.~.~ Complementary Schottky gate field effect transistors
170	DF	.~.~ And bipolar device
171	DF	.~.~ And passive electrical device (e.g., resistor, capacitor, etc.)
172	DF	.~.~ Having heterojunction (e.g., HEMT, MODFET, etc.)
173	DF	.~.~ Vertical channel
174	DF	.~.~ Doping of semiconductive channel region beneath gate (e.g., threshold voltage adjustment, etc.)
175	DF	.~.~ Buried channel
176	DF	.~.~ Plural gate electrodes (e.g., dual gate, etc.)
177	DF	.~.~ Closed or loop gate
178	DF	.~.~ Elemental semiconductor
179	DF	.~.~ Asymmetric
180	DF	.~.~ Self-aligned
181	DF	.~.~.~ Doping of semiconductive region
182	DF	.~.~.~.~ T-gate
183	DF	.~.~.~.~ Dummy gate
184	DF	.~.~.~.~ Utilizing gate sidewall structure
185	DF	.~.~.~.~.~ Multiple doping steps
186	DF	.~ Having junction gate (e.g., JFET, SIT, etc.)
187	DF	.~.~ Specified crystallographic orientation
188	DF	.~.~ Complementary junction gate field effect transistors
189	DF	.~.~ And bipolar transistor
190	DF	.~.~ And passive device (e.g., resistor, capacitor, etc.)
191	DF	.~.~ Having heterojunction
192	DF	.~.~ Vertical channel
193	DF	.~.~.~ Multiple parallel current paths (e.g., grid gate, etc.)
194	DF	.~.~ Doping of semiconductive channel region beneath gate (e.g., threshold voltage adjustment, etc.)
195	DF	.~.~ Plural gate electrodes
196	DF	.~.~ Including isolation structure
197	DF	.~ Having insulated gate (e.g., IGFET, MISFET, MOSFET, etc.)
198	DF	.~.~ Specified crystallographic orientation
199	DF	.~.~ Complementary insulated gate field effect transistors (i.e., CMOS)
200	DF	.~.~.~ And additional electrical device
201	DF	.~.~.~.~ Including insulated gate field effect transistor having gate surrounded by dielectric (i.e., floating gate)
202	DF	.~.~.~.~ Including bipolar transistor (i.e., BiCMOS)
203	DF	.~.~.~.~.~ Complementary bipolar transistors
204	DF	.~.~.~.~.~ Lateral bipolar transistor
205	DF	.~.~.~.~.~ Plural bipolar transistors of differing electrical characteristics
206	DF	.~.~.~.~.~ Vertical channel insulated gate field effect transistor
207	DF	.~.~.~.~.~ Including isolation structure
208	DF	.~.~.~.~.~.~ Isolation by PN junction only
209	DF	.~.~.~.~ Including additional vertical channel insulated gate field effect transistor
210	DF	.~.~.~.~ Including passive device (e.g., resistor, capacitor, etc.)
211	DF	.~.~.~ Having gate surrounded by dielectric (i.e., floating gate)
212	DF	.~.~.~ Vertical channel
213	DF	.~.~.~ Common active region
214	DF	.~.~.~ Having underpass or crossunder
215	DF	.~.~.~ Having fuse or integral short
216	DF	.~.~.~ Gate insulator structure constructed of diverse dielectrics (e.g., MNOS, etc.) or of nonsilicon compound
217	DF	.~.~.~ Doping of semiconductor channel region beneath gate insulator (e.g., threshold voltage adjustment, etc.)
218	DF	.~.~.~ Including isolation structure
219	DF	.~.~.~.~ Total dielectric isolation
220	DF	.~.~.~.~ Isolation by PN junction only
221	DF	.~.~.~.~ Dielectric isolation formed by grooving and refilling with dielectric material
222	DF	.~.~.~.~.~ With epitaxial semiconductor layer formation
223	DF	.~.~.~.~.~ Having well structure of opposite conductivity type
224	DF	.~.~.~.~.~.~ Plural wells
225	DF	.~.~.~.~ Recessed oxide formed by localized oxidation (i.e., LOCOS)
226	DF	.~.~.~.~.~ With epitaxial semiconductor layer formation
227	DF	.~.~.~.~.~ Having well structure of opposite conductivity type
228	DF	.~.~.~.~.~.~ Plural wells
229	DF	.~.~.~ Self-aligned
230	DF	.~.~.~.~ Utilizing gate sidewall structure
231	DF	.~.~.~.~.~ Plural doping steps
232	DF	.~.~.~.~ Plural doping steps
233	DF	.~.~.~ And contact formation
234	DF	.~.~ Including bipolar transistor (i.e., BiMOS)
235	DF	.~.~.~ Heterojunction bipolar transistor
236	DF	.~.~.~ Lateral bipolar transistor
237	DF	.~.~ Including diode
238	DF	.~.~ Including passive device (e.g., resistor, capacitor, etc.)
239	DF	.~.~.~ Capacitor
240	DF	.~.~.~.~ Having high dielectric constant insulator (e.g., Ta2O5, etc.)
241	DF	.~.~.~.~ And additional field effect transistor (e.g., sense or access transistor, etc.)
242	DF	.~.~.~.~.~ Including transistor formed on trench sidewalls
243	DF	.~.~.~.~ Trench capacitor
244	DF	.~.~.~.~.~ Utilizing stacked capacitor structure (e.g., stacked trench, buried stacked capacitor, etc.)
245	DF	.~.~.~.~.~ With epitaxial layer formed over the trench
246	DF	.~.~.~.~.~ Including doping of trench surfaces
247	DF	.~.~.~.~.~.~ Multiple doping steps
248	DF	.~.~.~.~.~.~ Including isolation means formed in trench
249	DF	.~.~.~.~.~.~ Doping by outdiffusion from a dopant source layer (e.g., doped oxide, etc.)
250	DF	.~.~.~.~ Planar capacitor
251	DF	.~.~.~.~.~ Including doping of semiconductive region
252	DF	.~.~.~.~.~.~ Multiple doping steps
253	DF	.~.~.~.~ Stacked capacitor
254	DF	.~.~.~.~.~ Including selectively removing material to undercut and expose storage node layer
255	DF	.~.~.~.~.~ Including texturizing storage node layer
256	DF	.~.~.~.~.~ Contacts formed by selective growth or deposition
257	DF	.~.~ Having additional gate electrode surrounded by dielectric (i.e., floating gate)
258	DF	.~.~.~ Including additional field effect transistor (e.g., sense or access transistor, etc.)
259	DF	.~.~.~ Including forming gate electrode in trench or recess in substrate
260	DF	.~.~.~ Textured surface of gate insulator or gate electrode
261	DF	.~.~.~ Multiple interelectrode dielectrics or nonsilicon compound gate insulator
262	DF	.~.~.~ Including elongated source or drain region disposed under thick oxide regions (e.g., buried or diffused bitline, etc.)
263	DF	.~.~.~.~ Tunneling insulator
264	DF	.~.~.~ Tunneling insulator
265	DF	.~.~.~ Oxidizing sidewall of gate electrode
266	DF	.~.~.~ Having additional, nonmemory control electrode or channel portion (e.g., for accessing field effect transistor structure, etc.)
267	DF	.~.~.~.~ Including forming gate electrode as conductive sidewall spacer to another electrode
268	DF	.~.~ Vertical channel
269	DF	.~.~.~ Utilizing epitaxial semiconductor layer grown through an opening in an insulating layer
270	DF	.~.~.~ Gate electrode in trench or recess in semiconductor substrate
271	DF	.~.~.~.~ V-gate
272	DF	.~.~.~.~ Totally embedded in semiconductive layers
273	DF	.~.~.~ Having integral short of source and base regions
274	DF	.~.~.~.~ Short formed in recess in substrate
275	DF	.~.~ Making plural insulated gate field effect transistors of differing electrical characteristics
276	DF	.~.~.~ Introducing a dopant into the channel region of selected transistors
277	DF	.~.~.~.~ Including forming overlapping gate electrodes
278	DF	.~.~.~.~ After formation of source or drain regions and gate electrode (e.g., late programming, encoding, etc.)
279	DF	.~.~ Making plural insulated gate field effect transistors having common active region
280	DF	.~.~ Having underpass or crossunder
281	DF	.~.~ Having fuse or integral short
282	DF	.~.~ Buried channel
283	DF	.~.~ Plural gate electrodes (e.g., dual gate, etc.)
284	DF	.~.~ Closed or loop gate
285	DF	.~.~ Utilizing compound semiconductor
286	DF	.~.~ Asymmetric
287	DF	.~.~ Gate insulator structure constructed of diverse dielectrics (e.g., MNOS, etc.) or of nonsilicon compound
288	DF	.~.~ Having step of storing electrical charge in gate dielectric
289	DF	.~.~ Doping of semiconductive channel region beneath gate insulator (e.g., adjusting threshold voltage, etc.)
290	DF	.~.~.~ After formation of source or drain regions and gate electrode
291	DF	.~.~.~ Using channel conductivity dopant of opposite type as that of source and drain
292	DF	.~.~ Direct application of electrical current
293	DF	.~.~ Fusion or solidification of semiconductor region
294	DF	.~.~ Including isolation structure
295	DF	.~.~.~ Total dielectric isolation
296	DF	.~.~.~ Dielectric isolation formed by grooving and refilling with dielectric material
297	DF	.~.~.~ Recessed oxide formed by localized oxidation (i.e., LOCOS)
298	DF	.~.~.~.~ Doping region beneath recessed oxide (e.g., to form chanstop, etc.)
299	DF	.~.~ Self-aligned
300	DF	.~.~.~ Having elevated source or drain (e.g., epitaxially formed source or drain, etc.)
301	DF	.~.~.~ Source or drain doping
302	DF	.~.~.~.~ Oblique implantation
303	DF	.~.~.~.~ Utilizing gate sidewall structure
304	DF	.~.~.~.~.~ Conductive sidewall component
305	DF	.~.~.~.~.~ Plural doping steps
306	DF	.~.~.~.~ Plural doping steps
307	DF	.~.~.~.~.~ Using same conductivity-type dopant
308	DF	.~.~ Radiation or energy treatment modifying properties of semiconductor regions of substrate (e.g., thermal, corpuscular, electromagnetic, etc.)
309	DF	FORMING BIPOLAR TRANSISTOR BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS
310	DF	.~ Gettering of semiconductor substrate
311	DF	.~ On insulating substrate or layer (i.e., SOI type)
312	DF	.~ Having heterojunction
313	DF	.~.~ Complementary bipolar transistors
314	DF	.~.~ And additional electrical device
315	DF	.~.~ Forming inverted transistor structure
316	DF	.~.~ Forming lateral transistor structure
317	DF	.~.~ Wide bandgap emitter
318	DF	.~.~ Including isolation structure
319	DF	.~.~.~ Air isolation (e.g., mesa, etc.)
320	DF	.~.~ Self-aligned
321	DF	.~.~.~ Utilizing dummy emitter
322	DF	.~ Complementary bipolar transistors
323	DF	.~.~ Having common active region (i.e., integrated injection logic (I2L), etc.)
324	DF	.~.~.~ Including additional electrical device
325	DF	.~.~.~ Having lateral bipolar transistor
326	DF	.~.~ Including additional electrical device
327	DF	.~.~ Having lateral bipolar transistor
328	DF	.~ Including diode
329	DF	.~ Including passive device (e.g., resistor, capacitor, etc.)
330	DF	.~.~ Resistor
331	DF	.~.~.~ Having same doping as emitter or collector
332	DF	.~.~.~ Lightly doped junction isolated resistor
333	DF	.~ Having fuse or integral short
334	DF	.~ Forming inverted transistor structure
335	DF	.~ Forming lateral transistor structure
336	DF	.~.~ Combined with vertical bipolar transistor
337	DF	.~.~ Active region formed along groove or exposed edge in semiconductor
338	DF	.~.~ Having multiple emitter or collector structure
339	DF	.~.~ Self-aligned
340	DF	.~ Making plural bipolar transistors of differing electrical characteristics
341	DF	.~ Using epitaxial lateral overgrowth
342	DF	.~ Having multiple emitter or collector structure
343	DF	.~ Mesa or stacked emitter
344	DF	.~ Washed emitter
345	DF	.~ Walled emitter
346	DF	.~ Emitter dip prevention or utilization
347	DF	.~ Permeable or metal base
348	DF	.~ Sidewall base contact
349	DF	.~ Pedestal base
350	DF	.~ Forming base region of specified dopant concentration profile (e.g., inactive base region more heavily doped than active base region, etc.)
351	DF	.~ Direct application of electrical current
352	DF	.~ Fusion or solidification of semiconductor region
353	DF	.~ Including isolation structure
354	DF	.~.~ Having semi-insulative region
355	DF	.~.~ Total dielectrical isolation
356	DF	.~.~ Isolation by PN junction only
357	DF	.~.~.~ Including epitaxial semiconductor layer formation
358	DF	.~.~.~.~ Up diffusion of dopant from substrate into epitaxial layer
359	DF	.~.~ Dielectric isolation formed by grooving and refilling with dielectrical material
360	DF	.~.~.~ With epitaxial semiconductor formation in groove
361	DF	.~.~.~ Including deposition of polysilicon or noninsulative material into groove
362	DF	.~.~ Recessed oxide by localized oxidation (i.e., LOCOS)
363	DF	.~.~.~ With epitaxial semiconductor layer formation
364	DF	.~ Self-aligned
365	DF	.~.~ Forming active region from adjacent doped polycrystalline or amorphous semiconductor
366	DF	.~.~.~ Having sidewall
367	DF	.~.~.~.~ Including conductive component
368	DF	.~.~.~ Simultaneously outdiffusing plural dopants from polysilicon or amorphous semiconductor
369	DF	.~.~ Dopant implantation or diffusion
370	DF	.~.~.~ Forming buried region (e.g., implanting through insulating layer, etc.)
371	DF	.~.~.~ Simultaneous introduction of plural dopants
372	DF	.~.~.~.~ Plural doping steps
373	DF	.~.~.~.~.~ Multiple ion implantation steps
374	DF	.~.~.~.~.~.~ Using same conductivity-type dopant
375	DF	.~.~.~.~.~ Forming partially overlapping regions
376	DF	.~.~.~.~.~ Single dopant forming regions of different depth or concentrations
377	DF	.~.~.~.~.~ Through same mask opening
378	DF	.~ Radiation or energy treatment modifying properties of semiconductor regions of substrate (e.g., thermal, corpuscular, electromagnetic, etc.)
379	DF	VOLTAGE VARIABLE CAPACITANCE DEVICE MANUFACTURE (E.G., VARACTOR, ETC.)
380	DF	AVALANCHE DIODE MANUFACTURE (E.G., IMPATT, TRAPPAT, ETC.)
381	DF	MAKING PASSIVE DEVICE (E.G., RESISTOR, CAPACITOR, ETC.)
382	DF	.~ Resistor
383	DF	.~.~ Lightly doped junction isolated resistor
384	DF	.~.~ Deposited thin film resistor
385	DF	.~.~.~ Altering resistivity of conductor
386	DF	.~ Trench capacitor
387	DF	.~.~ Having stacked capacitor structure (e.g., stacked trench, buried stacked capacitor, etc.)
388	DF	.~.~ With epitaxial layer formed over the trench
389	DF	.~.~ Including doping of trench surfaces
390	DF	.~.~.~ Multiple doping steps
391	DF	.~.~.~ Including isolation means formed in trench
392	DF	.~.~.~ Doping by outdiffusion from a dopant source layer (e.g., doped oxide)
393	DF	.~ Planar capacitor
394	DF	.~.~ Including doping of semiconductive region
395	DF	.~.~.~ Multiple doping steps
396	DF	.~ Stacked capacitor
397	DF	.~.~ Including selectively removing material to undercut and expose storage node layer
398	DF	.~.~ Including texturizing storage node layer
399	DF	.~.~ Having contacts formed by selective growth or deposition
400	DF	FORMATION OF ELECTRICALLY ISOLATED LATERAL SEMICONDUCTIVE STRUCTURE
401	DF	.~ Having substrate registration feature (e.g., alignment mark)
402	DF	.~ And gettering of substrate
403	DF	.~ Having semi-insulating component
404	DF	.~ Total dielectric isolation
405	DF	.~.~ And separate partially isolated semiconductor regions
406	DF	.~.~ Bonding of plural semiconductive substrates
407	DF	.~.~ Nondopant implantation
408	DF	.~.~ With electrolytic treatment step
409	DF	.~.~.~ Porous semiconductor formation
410	DF	.~.~ Encroachment of separate locally oxidized regions
411	DF	.~.~ Air isolation (e.g., beam lead supported semiconductor islands, etc.)
412	DF	.~.~.~ Semiconductor islands formed upon insulating substrate or layer (e.g., mesa isolation, etc.)
413	DF	.~.~ With epitaxial semiconductor formation
414	DF	.~ Isolation by PN junction only
415	DF	.~.~ Thermomigration
416	DF	.~.~ With epitaxial semiconductor formation
417	DF	.~.~.~ And simultaneous polycrystalline growth
418	DF	.~.~.~ Dopant addition
419	DF	.~.~.~.~ Plural doping steps
420	DF	.~.~ Plural doping steps
421	DF	.~ Having air-gap dielectric (e.g., groove, etc.)
422	DF	.~.~ Enclosed cavity
423	DF	.~ Implanting to form insulator
424	DF	.~ Grooved and refilled with deposited dielectric material
425	DF	.~.~ Combined with formation of recessed oxide by localized oxidation
426	DF	.~.~.~ Recessed oxide laterally extending from groove
427	DF	.~.~ Refilling multiple grooves of different widths or depths
428	DF	.~.~.~ Reflow of insulator
429	DF	.~.~ And epitaxial semiconductor formation in groove
430	DF	.~.~ And deposition of polysilicon or noninsulative material into groove
431	DF	.~.~.~ Oxidation of deposited material
432	DF	.~.~.~.~ Nonoxidized portions remaining in groove after oxidation
433	DF	.~.~ Dopant addition
434	DF	.~.~.~ From doped insulator in groove
435	DF	.~.~ Multiple insulative layers in groove
436	DF	.~.~.~ Reflow of insulator
437	DF	.~.~.~ Conformal insulator formation
438	DF	.~.~ Reflow of insulator
439	DF	.~ Recessed oxide by localized oxidation (i.e., LOCOS)
440	DF	.~.~ Including nondopant implantation
441	DF	.~.~ With electrolytic treatment step
442	DF	.~.~ With epitaxial semiconductor layer formation
443	DF	.~.~ Etchback of recessed oxide
444	DF	.~.~ Preliminary etching of groove
445	DF	.~.~.~ Masking of groove sidewall
446	DF	.~.~.~.~ Polysilicon containing sidewall
447	DF	.~.~.~.~ Dopant addition
448	DF	.~.~ Utilizing oxidation mask having polysilicon component
449	DF	.~.~ Dopant addition
450	DF	.~.~.~ Implanting through recessed oxide
451	DF	.~.~.~ Plural doping steps
452	DF	.~.~ Plural oxidation steps to form recessed oxide
453	DF	.~.~ And electrical conductor formation (i.e., metallization)
454	DF	.~ Field plate electrode
455	DF	BONDING OF PLURAL SEMICONDUCTOR SUBSTRATES
456	DF	.~ Having enclosed cavity
457	DF	.~ Warping of semiconductor substrate
458	DF	.~ Subsequent separation into plural bodies (e.g., delaminating, dicing, etc.)
459	DF	.~ Thinning of semiconductor substrate
460	DF	SEMICONDUCTOR SUBSTRATE DICING
461	DF	.~ Beam lead formation
462	DF	.~ Having specified scribe region structure (e.g., alignment mark, plural grooves, etc.)
463	DF	.~ By electromagnetic irradiation (e.g., electron, laser, etc.)
464	DF	.~ With attachment to temporary support or carrier
465	DF	.~ Having a perfecting coating
466	DF	DIRECT APPLICATION OF ELECTRICAL CURRENT
467	DF	.~ To alter conductivity of fuse or antifuse element
468	DF	.~ Electromigration
469	DF	.~ Utilizing pulsed current
470	DF	.~ Fusion of semiconductor region
471	DF	GETTERING OF SUBSTRATE
472	DF	.~ By vibrating or impacting
473	DF	.~ By implanting or irradiating
474	DF	.~.~ Ionized radiation (e.g., corpuscular or plasma treatment, etc.)
475	DF	.~.~.~ Hydrogen plasma (i.e., hydrogenization)
476	DF	.~ By layers which are coated, contacted, or diffused
477	DF	.~ By vapor phase surface reaction
478	DF	FORMATION OF SEMICONDUCTIVE ACTIVE REGION ON ANY SUBSTRATE (E.G., FLUID GROWTH, DEPOSITION)
479	DF	.~ On insulating substrate or layer
480	DF	.~.~ Including implantation of ion which reacts with semiconductor substrate to form insulating layer
481	DF	.~.~ Utilizing epitaxial lateral overgrowth
482	DF	.~ Amorphous semiconductor
483	DF	.~.~ Compound semiconductor
484	DF	.~.~ Running length (e.g., sheet, strip, etc.)
485	DF	.~.~ Deposition utilizing plasma (e.g., glow discharge, etc.)
486	DF	.~.~ And subsequent crystallization
487	DF	.~.~.~ Utilizing wave energy (e.g., laser, electron beam, etc.)
488	DF	.~ Polycrystalline semiconductor
489	DF	.~.~ Simultaneous single crystal formation
490	DF	.~.~ Running length (e.g., sheet, strip, etc.)
491	DF	.~.~ And subsequent doping of polycrystalline semiconductor
492	DF	.~ Fluid growth step with preceding and subsequent diverse operation
493	DF	.~ Plural fluid growth steps with intervening diverse operation
494	DF	.~.~ Differential etching
495	DF	.~.~ Doping of semiconductor
496	DF	.~.~ Coating of semiconductive substrate with nonsemiconductive material
497	DF	.~ Fluid growth from liquid combined with preceding diverse operation
498	DF	.~.~ Differential etching
499	DF	.~.~ Doping of semiconductor
500	DF	.~ Fluid growth from liquid combined with subsequent diverse operation
501	DF	.~.~ Doping of semiconductor
502	DF	.~.~ Heat treatment
503	DF	.~ Fluid growth from gaseous state combined with preceding diverse operation
504	DF	.~.~ Differential etching
505	DF	.~.~ Doping of semiconductor
506	DF	.~.~.~ Ion implantation
507	DF	.~ Fluid growth from gaseous state combined with subsequent diverse operation
508	DF	.~.~ Doping of semiconductor
509	DF	.~.~ Heat treatment
510	DF	INTRODUCTION OF CONDUCTIVITY MODIFYING DOPANT INTO SEMICONDUCTIVE MATERIAL
511	DF	.~ Ordering or disordering
512	DF	.~ Involving nuclear transmutation doping
513	DF	.~ Plasma (e.g., glow discharge, etc.)
514	DF	.~ Ion implantation of dopant into semiconductor region
515	DF	.~.~ Ionized molecules
516	DF	.~.~ Including charge neutralization
517	DF	.~.~ Of semiconductor layer on insulating substrate or layer
518	DF	.~.~ Of compound semiconductor
519	DF	.~.~.~ Including multiple implantation steps
520	DF	.~.~.~.~ Providing nondopant ion (e.g., proton, etc.)
521	DF	.~.~.~.~ Using same conductivity-type dopant
522	DF	.~.~.~ Including heat treatment
523	DF	.~.~.~ And contact formation (i.e., metallization)
524	DF	.~.~ Into grooved semiconductor substrate region
525	DF	.~.~ Using oblique beam
526	DF	.~.~ Forming buried region
527	DF	.~.~ Including multiple implantation steps
528	DF	.~.~.~ Providing nondopant ion (e.g., proton, etc.)
529	DF	.~.~.~ Using same conductivity-type dopant
530	DF	.~.~ Including heat treatment
531	DF	.~.~ Using shadow mask
532	DF	.~.~ Into polycrystalline region
533	DF	.~.~ And contact formation (i.e., metallization)
534	DF	.~.~.~ Rectifying contact (i.e., Schottky contact)
535	DF	.~ By application of corpuscular or electromagnetic radiation (e.g., electron, laser, etc.)
536	DF	.~.~ Recoil implantation
537	DF	.~ Fusing dopant with substrate (i.e., alloy junction)
538	DF	.~.~ Using additional material to improve wettability or flow characteristics (e.g., flux, etc.)
539	DF	.~.~ Application of pressure to material during fusion
540	DF	.~.~ Including plural controlled heating or cooling steps or nonuniform heating
541	DF	.~.~.~ Including diffusion after fusing step
542	DF	.~ Diffusing a dopant
543	DF	.~.~ To control carrier lifetime (i.e., deep level dopant)
544	DF	.~.~ To solid-state solubility concentration
545	DF	.~.~ Forming partially overlapping regions
546	DF	.~.~ Plural dopants in same region (e.g., through same mask opening, etc.)
547	DF	.~.~.~ Simultaneously
548	DF	.~.~ Plural dopants simultaneously in plural regions
549	DF	.~.~ Single dopant forming plural diverse regions (e.g., forming regions of different concentrations or of different depths, etc.)
550	DF	.~.~ Nonuniform heating
551	DF	.~.~ Using multiple layered mask
552	DF	.~.~.~ Having plural predetermined openings in master mask
553	DF	.~.~ Using metal mask
554	DF	.~.~ Outwardly
555	DF	.~.~ Laterally under mask opening
556	DF	.~.~ Edge diffusion by using edge portion of structure other than masking layer to mask
557	DF	.~.~ From melt
558	DF	.~.~ From solid dopant source in contact with semiconductor region
559	DF	.~.~.~ Using capping layer over dopant source to prevent out-diffusion of dopant
560	DF	.~.~.~ Plural diffusion stages
561	DF	.~.~.~ Dopant source within trench or groove
562	DF	.~.~.~ Organic source
563	DF	.~.~.~ Glassy source or doped oxide
564	DF	.~.~.~ Polycrystalline semiconductor source
565	DF	.~.~ From vapor phase
566	DF	.~.~.~ Plural diffusion stages
567	DF	.~.~.~ Solid source in operative relation with semiconductor region
568	DF	.~.~.~.~ In capsule-type enclosure
569	DF	.~.~.~ Into compound semiconductor region
570	DF	FORMING SCHOTTKY JUNCTION (I.E., SEMICONDUCTOR-CONDUCTOR RECTIFYING JUNCTION CONTACT)
571	DF	.~ Combined with formation of ohmic contact to semiconductor region
572	DF	.~ Compound semiconductor
573	DF	.~.~ Multilayer electrode
574	DF	.~.~.~ T-shaped electrode
575	DF	.~.~.~ Using platinum group metal (i.e., platinum (Pt), palladium (Pd), rodium (Rh), ruthenium (Ru), iridium (Ir), osmium (Os), or alloy thereof)
576	DF	.~.~ Into grooved or recessed semiconductor region
577	DF	.~.~.~ Utilizing lift-off
578	DF	.~.~.~ Forming electrode of specified shape (e.g., slanted, etc.)
579	DF	.~.~.~.~ T-shaped electrode
580	DF	.~ Using platinum group metal (i.e., platinum (Pt), palladium (Pd), rhodium (Rh), ruthenium (Ru), iridium (Ir), osmium (Os), or alloy thereof)
581	DF	.~.~ Silicide
582	DF	.~ Using refractory group metal (i.e., titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), or alloy thereof)
583	DF	.~.~ Silicide
584	DF	COATING WITH ELECTRICALLY OR THERMALLY CONDUCTIVE MATERIAL
585	DF	.~ Insulated gate formation
586	DF	.~.~ Combined with formation of ohmic contact to semiconductor region
587	DF	.~.~ Forming array of gate electrodes
588	DF	.~.~.~ Plural gate levels
589	DF	.~.~ Recessed into semiconductor substrate
590	DF	.~.~ Compound semiconductor
591	DF	.~.~ Gate insulator structure constructed of plural layers or nonsilicon containing compound
592	DF	.~.~ Possessing plural conductive layers (e.g., polycide)
593	DF	.~.~.~ Separated by insulator (i.e., floating gate)
594	DF	.~.~.~.~ Tunnelling dielectric layer
595	DF	.~.~ Having sidewall structure
596	DF	.~.~.~ Portion of sidewall structure is conductive
597	DF	.~ To form ohmic contact to semiconductive material
598	DF	.~.~ Selectively interconnecting (e.g., customization, wafer scale integration, etc.)
599	DF	.~.~.~ With electrical circuit layout
600	DF	.~.~.~ Using structure alterable to conductive state (i.e., antifuse)
601	DF	.~.~.~ Using structure alterable to nonconductive state (i.e., fuse)
602	DF	.~.~ To compound semiconductor
603	DF	.~.~.~ II-VI compound semiconductor
604	DF	.~.~.~ III-V compound semiconductor
605	DF	.~.~.~.~ Multilayer electrode
606	DF	.~.~.~.~ Ga and As containing semiconductor
607	DF	.~.~ With epitaxial conductor formation
608	DF	.~.~ Oxidic conductor (e.g., indium tin oxide, etc.)
609	DF	.~.~.~ Transparent conductor
610	DF	.~.~ Conductive macromolecular conductor (including metal powder filled composition)
611	DF	.~.~ Beam lead formation
612	DF	.~.~ Forming solder contact or bonding pad
613	DF	.~.~.~ Bump electrode
614	DF	.~.~.~.~ Plural conductive layers
615	DF	.~.~.~.~ Including fusion of conductor
616	DF	.~.~.~.~.~ By transcription from auxiliary substrate
617	DF	.~.~.~.~.~ By wire bonding
618	DF	.~.~ Contacting multiple semiconductive regions (i.e., interconnects)
619	DF	.~.~.~ Air bridge structure
620	DF	.~.~.~ Forming contacts of differing depths into semiconductor substrate
621	DF	.~.~.~ Contacting diversely doped semiconductive regions (e.g., p-type and n-type regions, etc.)
622	DF	.~.~.~ Multiple metal levels, separated by insulating layer (i.e., multiple level metallization)
623	DF	.~.~.~.~ Including organic insulating material between metal levels
624	DF	.~.~.~.~ Separating insulating layer is laminate or composite of plural insulating materials
625	DF	.~.~.~.~ At least one metallization level formed of diverse conductive layers
626	DF	.~.~.~.~.~ Planarization
627	DF	.~.~.~.~.~ At least one layer forms a diffusion barrier
628	DF	.~.~.~.~.~ Having adhesion promoting layer
629	DF	.~.~.~.~.~ Diverse conductive layers limited to viahole/plug
630	DF	.~.~.~.~.~.~ Silicide formation
631	DF	.~.~.~.~ Having planarization step
632	DF	.~.~.~.~.~ Utilizing reflow
633	DF	.~.~.~.~.~ Simultaneously by chemical and mechanical means
634	DF	.~.~.~.~.~ Utilizing etch-stop layer
635	DF	.~.~.~.~ Insulator formed by reaction with conductor (e.g., oxidation, etc.)
636	DF	.~.~.~.~ Including use of antireflective layer
637	DF	.~.~.~.~ With formation of opening (i.e., viahole) in insulative layer
638	DF	.~.~.~.~.~ Having viaholes of diverse width
639	DF	.~.~.~.~.~ Having viahole with sidewall component
640	DF	.~.~.~.~.~ Having viahole of tapered shape
641	DF	.~.~.~.~ Selective deposition
642	DF	.~.~.~ Diverse conductors
643	DF	.~.~.~.~ At least one layer forms a diffusion barrier
644	DF	.~.~.~.~ Having adhesion promoting layer
645	DF	.~.~.~.~ Having planarization step
646	DF	.~.~.~.~.~ Utilizing reflow
647	DF	.~.~.~.~ Having electrically conductive polysilicon component
648	DF	.~.~.~.~ Having refractory group metal (i.e., titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), or alloy thereof)
649	DF	.~.~.~.~.~ Silicide
650	DF	.~.~.~.~ Having noble group metal (i.e., silver (Ag), gold (Au), platinum (Pt), palladium (Pd), rhodium (Rh), ruthenium (Ru), iridium (Ir), osmium (Os), or alloy thereof)
651	DF	.~.~.~.~.~ Silicide
652	DF	.~.~ Plural layered electrode or conductor
653	DF	.~.~.~ At least one layer forms a diffusion barrier
654	DF	.~.~.~ Having adhesion promoting layer
655	DF	.~.~.~ Silicide
656	DF	.~.~.~ Having refractory group metal (i.e., titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), or alloy thereof)
657	DF	.~.~.~ Having electrically conductive polysilicon component
658	DF	.~.~ Altering composition of conductor
659	DF	.~.~.~ Implantation of ion into conductor
660	DF	.~.~ Including heat treatment of conductive layer
661	DF	.~.~.~ Subsequent fusing conductive layer
662	DF	.~.~.~.~ Utilizing laser
663	DF	.~.~.~ Rapid thermal anneal
664	DF	.~.~.~.~ Forming silicide
665	DF	.~.~ Utilizing textured surface
666	DF	.~.~ Specified configuration of electrode or contact
667	DF	.~.~.~ Conductive feedthrough or through-hole in substrate
668	DF	.~.~.~ Specified aspect ratio of conductor or viahole
669	DF	.~.~ And patterning of conductive layer
670	DF	.~.~.~ Utilizing lift-off
671	DF	.~.~.~ Utilizing multilayered mask
672	DF	.~.~.~ Plug formation (i.e., in viahole)
673	DF	.~.~.~ Tapered etching
674	DF	.~.~ Selective deposition of conductive layer
675	DF	.~.~.~ Plug formation (i.e., in viahole)
676	DF	.~.~.~ Utilizing electromagnetic or wave energy
677	DF	.~.~.~ Pretreatment of surface to enhance or retard deposition
678	DF	.~.~ Electroless deposition of conductive layer
679	DF	.~.~ Evaporative coating of conductive layer
680	DF	.~.~ Utilizing chemical vapor deposition (i.e., CVD)
681	DF	.~.~.~ Of organo-metallic precursor (i.e., MOCVD)
682	DF	.~.~ Silicide
683	DF	.~.~.~ Of refractory group metal (i.e., titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), or alloy thereof)
684	DF	.~.~ Electrically conductive polysilicon
685	DF	.~.~ Refractory group metal (i.e., titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), or alloy thereof)
686	DF	.~.~ Noble group metal (i.e., silver (Ag), gold (Au), platinum (Pt), palladium (Pd), rhodium (Rh), ruthenium (Ru), iridium (Ir), osmium (Os), or alloy thereof)
687	DF	.~.~ Copper of copper alloy conductor
688	DF	.~.~ Aluminum or aluminum alloy conductor
689	DF	CHEMICAL ETCHING
690	DF	.~ Combined with the removal of material by nonchemical means (e.g., ablating, abrading, etc.)
691	DF	.~.~ Combined mechanical and chemical material removal
692	DF	.~.~.~ Simultaneous (e.g., chemical-mechanical polishing, etc.)
693	DF	.~.~.~.~ Utilizing particulate abradant
694	DF	.~ Combined with coating step
695	DF	.~.~ Simultaneous etching and coating
696	DF	.~.~ Coating of sidewall
697	DF	.~.~ Planarization by etching and coating
698	DF	.~.~.~ Utilizing reflow
699	DF	.~.~.~ Plural coating steps
700	DF	.~.~ Formation of groove or trench
701	DF	.~.~.~ Tapered configuration
702	DF	.~.~.~ Plural coating steps
703	DF	.~.~ Plural coating steps
704	DF	.~ Having liquid and vapor etching steps
705	DF	.~ Altering etchability of substrate region by compositional or crystalline modification
706	DF	.~ Vapor phase etching (i.e., dry etching)
707	DF	.~.~ Utilizing electromagnetic or wave energy
708	DF	.~.~.~ Photo-induced etching
709	DF	.~.~.~.~ Photo-induced plasma etching
710	DF	.~.~.~ By creating electric field (e.g., plasma, glow discharge, etc.)
711	DF	.~.~.~.~ Utilizing multiple gas energizing means
712	DF	.~.~.~.~ Reactive ion beam etching (i.e., RIBE)
713	DF	.~.~.~.~ Forming tapered profile (e.g., tapered etching, etc.)
714	DF	.~.~.~.~ Including change in etch influencing parameter (e.g., energizing power, etchant composition, temperature, etc.)
715	DF	.~.~.~.~ With substrate heating or cooling
716	DF	.~.~.~.~ With substrate handling (e.g., conveying, etc.)
717	DF	.~.~.~.~ Utilizing multilayered mask
718	DF	.~.~.~.~ Compound semiconductor
719	DF	.~.~.~.~ Silicon
720	DF	.~.~.~.~ Electrically conductive material (e.g., metal, conductive oxide, etc.)
721	DF	.~.~.~.~.~ Silicide
722	DF	.~.~.~.~ Metal oxide
723	DF	.~.~.~.~ Silicon oxide or glass
724	DF	.~.~.~.~ Silicon nitride
725	DF	.~.~.~.~ Organic material (e.g., resist, etc.)
726	DF	.~.~.~.~ Having microwave gas energizing
727	DF	.~.~.~.~.~ Producing energized gas remotely located from substrate
728	DF	.~.~.~.~.~.~ Using magnet (e.g., electron cyclotron resonance, etc.)
729	DF	.~.~.~.~ Using specified electrode/susceptor configuration (e.g., of multiple substrates using barrel-type susceptor, planar reactor configuration, etc.) to generate plasma
730	DF	.~.~.~.~.~ Producing energized gas remotely located from substrate
731	DF	.~.~.~.~.~.~ Using intervening shield structure
732	DF	.~.~.~.~ Using magnet (e.g., electron cyclotron resonance, etc.)
733	DF	.~.~.~ Using or orientation dependent etchant (i.e., anisotropic etchant)
734	DF	.~.~ Sequential etching steps on a single layer
735	DF	.~.~ Differential etching of semiconductor substrate
736	DF	.~.~.~ Utilizing multilayered mask
737	DF	.~.~.~ Substrate possessing multiple layers
738	DF	.~.~.~.~ Selectively etching substrate possessing multiple layers of differing etch characteristics
739	DF	.~.~.~.~.~ Lateral etching of intermediate layer (i.e., undercutting)
740	DF	.~.~.~.~.~ Utilizing etch stop layer
741	DF	.~.~.~.~.~.~ PN junction functions as etch stop
742	DF	.~.~.~.~ Electrically conductive material (e.g., metal, conductive oxide, etc.)
743	DF	.~.~.~.~ Silicon oxide or glass
744	DF	.~.~.~.~ Silicon nitride
745	DF	.~ Liquid phase etching
746	DF	.~.~ Utilizing electromagnetic or wave energy
747	DF	.~.~ With relative movement between substrate and confined pool of etchant
748	DF	.~.~ Projection of etchant against a moving substrate or controlling the angle or pattern of projected etchant
749	DF	.~.~ Sequential application of etchant
750	DF	.~.~.~ To same side of substrate
751	DF	.~.~.~.~ Each etch step exposes surface of an adjacent layer
752	DF	.~.~ Germanium
753	DF	.~.~ Silicon
754	DF	.~.~ Electrically conductive material (e.g., metal, conductive oxide, etc.)
755	DF	.~.~.~ Silicide
756	DF	.~.~ Silicon oxide
757	DF	.~.~ Silicon nitride
758	DF	COATING OF SUBSTRATE CONTAINING SEMICONDUCTOR REGION OR OF SEMICONDUCTOR SUBSTRATE
759	DF	.~ Combined with the removal of material by nonchemical means
760	DF	.~ Utilizing reflow (e.g., planarization, etc.)
761	DF	.~ Multiple layers
762	DF	.~.~ At least one layer formed by reaction with substrate
763	DF	.~.~ Layers formed of diverse composition or by diverse coating processes
764	DF	.~ Formation of semi-insulative polycrystalline silicon
765	DF	.~ By reaction with substrate
766	DF	.~.~ Implantation of ion (e.g., to form ion amorphousized region prior to selective oxidation, reacting with substrate to form insulative region, etc.)
767	DF	.~.~ Compound semiconductor substrate
768	DF	.~.~ Reaction with conductive region
769	DF	.~.~ Reaction with silicon semiconductive region (e.g., oxynitride formation, etc.)
770	DF	.~.~.~ Oxidation
771	DF	.~.~.~.~ Using electromagnetic or wave energy
772	DF	.~.~.~.~.~ Microwave gas energizing
773	DF	.~.~.~.~ In atmosphere containing water vapor (i.e., wet oxidation)
774	DF	.~.~.~.~ In atmosphere containing halogen
775	DF	.~.~.~ Nitridation
776	DF	.~.~.~.~ Using electromagnetic or wave energy
777	DF	.~.~.~.~.~ Microwave gas energizing
778	DF	.~ Insulative material deposited upon semiconductive substrate
779	DF	.~.~ Compound semiconductor substrate
780	DF	.~.~ Depositing organic material (e.g., polymer, etc.)
781	DF	.~.~.~ Subsequent heating modifying organic coating composition
782	DF	.~.~ With substrate handling during coating (e.g., immersion, spinning, etc.)
783	DF	.~.~ Insulative material having impurity (e.g., for altering physical characteristics, etc.)
784	DF	.~.~.~ Introduction simultaneous with deposition
785	DF	.~.~ Insulative material is compound of refractory group metal (i.e., titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), or alloy thereof)
786	DF	.~.~ Tertiary silicon containing compound formation (e.g., oxynitride formation, etc.)
787	DF	.~.~ Silicon oxide formation
788	DF	.~.~.~ Using electromagnetic or wave energy (e.g., photo-induced deposition, plasma, etc.)
789	DF	.~.~.~.~ Organic reactant
790	DF	.~.~.~ Organic reactant
791	DF	.~.~ Silicon nitride formation
792	DF	.~.~.~ Utilizing electromagnetic or wave energy (e.g., photo-induced deposition, plasma, etc.)
793	DF	.~.~.~.~ Organic reactant
794	DF	.~.~.~ Organic reactant
795	DF	RADIATION OR ENERGY TREATMENT MODIFYING PROPERTIES OF SEMICONDUCTOR REGION OF SUBSTRATE (E.G., THERMAL, CORPUSCULAR, ELECTROMAGNETIC, ETC.)
796	DF	.~ Compound semiconductor
797	DF	.~.~ Ordering or disordering
798	DF	.~ Ionized irradiation (e.g., corpuscular or plasma treatment, etc.)
799	DF	.~ By differential heating
800	DF	MISCELLANEOUS
		*********************************
		CROSS-REFERENCE ART COLLECTIONS
		**********************************
900	DF	BULK EFFECT DEVICE MAKING
901	DF	CAPACITIVE JUNCTION
902	DF	CAPPING LAYER
903	DF	CATALYST AIDED DEPOSITION
904	DF	CHARGE CARRIER LIFETIME CONTROL
905	DF	CLEANING OF REACTION CHAMBER
906	DF	CLEANING OF WAFER AS INTERIM STEP
907	DF	CONTINUOUS PROCESSING
908	DF	.~ Utilizing cluster apparatus
909	DF	CONTROLLED ATMOSPHERE
910	DF	CONTROLLING CHARGING STATE AT SEMICONDUCTOR-INSULATOR INTERFACE
911	DF	DIFFERENTIAL OXIDATION AND ETCHING
912	DF	DISPLACING PN JUNCTION
913	DF	DIVERSE TREATMENTS PERFORMED IN UNITARY CHAMBER
914	DF	DOPING
915	DF	.~ Amphoteric doping
916	DF	.~ Autodoping control or utilization
917	DF	.~ Deep level dopants (e.g., gold (Au), chromium (Cr), iron (Fe), nickel (Ni), etc.)
918	DF	.~ Special or nonstandard dopant
919	DF	.~ Compensation doping
920	DF	.~ Controlling diffusion profile by oxidation
921	DF	.~ Nonselective diffusion
922	DF	.~ Diffusion along grain boundaries
923	DF	.~ Diffusion through a layer
924	DF	.~ To facilitate selective etching
925	DF	.~ Fluid growth doping control (e.g., delta doping, etc.)
926	DF	DUMMY METALLIZATION
927	DF	ELECTROMIGRATION RESISTANT METALLIZATION
928	DF	FRONT AND REAR SURFACE PROCESSING
929	DF	EUTECTIC SEMICONDUCTOR
930	DF	TERNARY OR QUATERNARY SEMICONDUCTOR COMPRISED OF ELEMENTS FROM THREE DIFFERENT GROUPS (E.G., I-III-V, ETC.)
931	DF	SILICON CARBIDE SEMICONDUCTOR
932	DF	BORON NITRIDE SEMICONDUCTOR
933	DF	GERMANIUM OR SILICON OR GE-SI ON III-V
934	DF	SHEET RESISTANCE (I.E., DOPANT PARAMETERS)
935	DF	GAS FLOW CONTROL
936	DF	GRADED ENERGY GAP
937	DF	HILLOCK PREVENTION
938	DF	LATTICE STRAIN CONTROL OR UTILIZATION
939	DF	LANGMUIR-BLODGETT FILM UTILIZATION
940	DF	LASER ABLATIVE MATERIAL REMOVAL
941	DF	LOADING EFFECT MITIGATION
942	DF	MASKING
943	DF	.~ Movable
944	DF	.~ Shadow
945	DF	.~ Special (e.g., metal, etc.)
946	DF	.~ Step and repeat
947	DF	.~ Subphotolithographic processing
948	DF	.~ Radiation resist
949	DF	.~.~ Energy beam treating radiation resist on semiconductor
950	DF	.~.~ Multilayer mask including nonradiation sensitive layer
951	DF	.~.~ Lift-off
952	DF	.~.~ Utilizing antireflective layer
953	DF	MAKING RADIATION RESISTANT DEVICE
954	DF	MAKING OXIDE-NITRIDE-OXIDE DEVICE
955	DF	MELT-BACK
956	DF	MAKING MULTIPLE WAVELENGTH EMISSIVE DEVICE
957	DF	MAKING METAL-INSULATOR-METAL DEVICE
958	DF	PASSIVATION LAYER
959	DF	MECHANICAL POLISHING OF WAFER
960	DF	POROUS SEMICONDUCTOR
961	DF	ION BEAM SOURCE AND GENERATION
962	DF	QUANTUM DOTS AND LINES
963	DF	REMOVING PROCESS RESIDUES FROM VERTICAL SUBSTRATE SURFACES
964	DF	ROUGHENED SURFACE
965	DF	SHAPED JUNCTION FORMATION
966	DF	SELECTIVE OXIDATION OF ION-AMORPHOUSIZED LAYER
967	DF	SEMICONDUCTOR ON SPECIFIED INSULATOR
968	DF	SEMICONDUCTOR-METAL-SEMICONDUCTOR
969	DF	SIMULTANEOUS FORMATION OF MONOCRYSTALLINE AND POLYCRYSTALLINE REGIONS
970	DF	SPECIFIED ETCH STOP MATERIAL
971	DF	STOICHIOMETRIC CONTROL OF HOST SUBSTRATE COMPOSITION
972	DF	STORED CHARGE ERASURE
973	DF	SUBSTRATE ORIENTATION
974	DF	SUBSTRATE SURFACE PREPARATION
975	DF	SUBSTRATE OR MASK ALIGNING FEATURE
976	DF	TEMPORARY PROTECTIVE LAYER
977	DF	THINNING OR REMOVAL OF SUBSTRATE
978	DF	FORMING TAPERED EDGES ON SUBSTRATE OR ADJACENT LAYERS
979	DF	TUNNEL DIODES
980	DF	UTILIZING PROCESS EQUIVALENTS OR OPTIONS
981	DF	UTILIZING VARYING DIELECTRIC THICKNESS
982	DF	VARYING ORIENTATION OF DEVICES IN ARRAY
983	DF	ZENER DIODES
		*********************************
		FOREIGN ART COLLECTIONS
		*********************************
FOR 100	DF	.~ Etching of semiconductor precursor, substrates, and devices used in an electrical function (156/625.1)
FOR 101	DF	.~.~ Measuring, testing, or inspecting (156/626.1)
FOR 102	DF	.~.~.~ By electrical means or of electrical property (156/627.1)
FOR 103	DF	.~.~ Altering the etchability of a substrate by alloying, diffusing, or chemical reacting (156/628.1)
FOR 104	DF	.~.~ With uniting of preforms (e.g., laminating, etc.) (156/629.1)
FOR 105	DF	.~.~.~ Prior to etching (156/630.1)
FOR 106	DF	.~.~.~.~ Delamination subsequent to etching (156/631.1)
FOR 107	DF	.~.~.~.~ With coating (156/632.1)
FOR 108	DF	.~.~.~ Differential etching (156/633.1)
FOR 109	DF	.~.~.~.~ Metal layer etched (156/634.1)
FOR 110	DF	.~.~ With in situ activation or combining of etching components on surface (156/635.1)
FOR 111	DF	.~.~ With thin film of etchant between relatively moving substrate and conforming surface (e.g., chemical lapping, etc.) (156/636.1)
FOR 112	DF	.~.~ With relative movement between the substrate and a confined pool of etchant (156/637.1)
FOR 113	DF	.~.~.~ With removal of adhered reaction product from substrate (156/638.1)
FOR 114	DF	.~.~.~ With substrate rotation, repeated dipping, or advanced movement (156/639.1)
FOR 115	DF	.~.~ Projection of etchant against a moving substrate or controlling the angle or pattern of projected etchant (156/640.1)
FOR 116	DF	.~.~ Recycling or regenerating etchant (156/642.1)
FOR 117	DF	.~.~ With treatment by high energy radiation or plasma (e.g., ion beam, etc.) (156/643.1)
FOR 118	DF	.~.~ Forming or increasing the size of an aperture (156/644.1)
FOR 119	DF	.~.~ With mechanical deformation, severing, or abrading of a substrate (156/ 645.1)
FOR 120	DF	.~.~ Etchant is a gas (156/646.1)
FOR 121	DF	.~.~ Etching according to crystalline planes (156/647.1)
FOR 122	DF	.~.~ Etching isolates or modifies a junction in a barrier layer (156/648.1)
FOR 123	DF	.~.~.~ Discrete junction isolated (e.g., mesa formation, etc.) (156/649.1)
FOR 124	DF	.~.~ Sequential application of etchant material (156/650.1)
FOR 125	DF	.~.~.~ Sequentially etching the same surface of a substrate (156/651.1)
FOR 126	DF	.~.~.~.~ Each etching exposes surface of an adjacent layer (156/652.1)
FOR 127	DF	.~.~.~.~.~ Etched layer contains silicon (e.g., oxide, nitride, etc.) (156/653.1)
FOR 128	DF	.~.~ Differential etching of a substrate (156/654.1)
FOR 129	DF	.~.~.~ Composite substrate (156/655.1)
FOR 130	DF	.~.~.~.~ Substrate contains metallic element or compound (156/656.1)
FOR 131	DF	.~.~.~.~ Substrate contains silicon or silicon compound (156/657.1)
FOR 132	DF	.~.~.~ Resist coating (156/659.11)
FOR 133	DF	.~.~.~.~ Plural resist coating (156/661.11)
FOR 134	DF	.~.~ Silicon, germanium, or gallium containing substrate (156/662.1)
FOR 135	DF	MAKING DEVICE HAVING ORGANIC SEMICONDUCTOR COMPONENT (437/1)
FOR 136	DF	MAKING DEVICE RESPONSIVE TO RADIATION (437/2)
FOR 137	DF	.~ Radiation detectors, e.g., infrared, etc. (437/3)
FOR 138	DF	.~ Composed of polycrystalline material (437/4)
FOR 139	DF	.~ Having semiconductor compound (437/5)
FOR 140	DF	MAKING THYRISTOR, E.G., DIAC, TRIAC, ETC. (437/6)
FOR 141	DF	INCLUDING CONTROL RESPONSIVE TO SENSED CONDITION (437/7)
FOR 142	DF	INCLUDING TESTING OR MEASURING (437/8)
FOR 143	DF	INCLUDING APPLICATION OF VIBRATORY FORCE (437/9)
FOR 144	DF	INCLUDING GETTERING (437/10)
FOR 145	DF	.~ By ion implanting or irradiating (437/11)
FOR 146	DF	.~ By layers which are coated, contacted, or diffused (437/12)
FOR 147	DF	.~ By vapor phase surface reaction (437/13)
FOR 148	DF	THERMOMIGRATION (437/14)
FOR 149	DF	INCLUDING FORMING A SEMICONDUCTOR JUNCTION (437/15)
FOR 150	DF	.~ Using energy beam to introduce dopant or modify dopant distribution (437/ 16)
FOR 151	DF	.~.~ Neutron, gamma ray or electron beam (437/17)
FOR 152	DF	.~.~ Ionized molecules (437/18)
FOR 153	DF	.~.~ Coherent light beam (437/19)
FOR 154	DF	.~.~ Ion beam implantation (437/20)
FOR 155	DF	.~.~ Of semiconductor on insulating substrate (437/21)
FOR 156	DF	.~.~.~ Of semiconductor compound (437/22)
FOR 157	DF	.~.~.~.~ Light emitting diode (LED) (437/23)
FOR 158	DF	.~.~.~ Providing nondopant ion including proton (437/24)
FOR 159	DF	.~.~.~ Providing auxiliary heating (437/25)
FOR 160	DF	.~.~.~ Forming buried region (437/26)
FOR 161	DF	.~.~.~ Including multiple implantations of same region (437/27)
FOR 162	DF	.~.~.~.~ Through insulating layer (437/28)
FOR 163	DF	.~.~.~.~.~ Forming field effect transistor (FET) type device (437/29)
FOR 164	DF	.~.~.~.~ Using same conductivity type dopant (437/30)
FOR 165	DF	.~.~.~.~ Forming bipolar transistor (NPN/PNP) (437/31)
FOR 166	DF	.~.~.~.~.~ Lateral bipolar transistor (437/32)
FOR 167	DF	.~.~.~.~.~ Having dielectric isolation (437/33)
FOR 168	DF	.~.~.~.~ Forming complementary MOS (metal oxide semiconductor) (437/34)
FOR 169	DF	.~.~.~ Using oblique beam (437/35)
FOR 170	DF	.~.~.~ Using shadow mask (437/36)
FOR 171	DF	.~.~.~ Having projected range less than thickness of dielectrics on substrate (437/37)
FOR 172	DF	.~.~.~ Into shaped or grooved semiconductor substrate (437/38)
FOR 173	DF	.~.~.~ Involving Schottky contact formation (437/39)
FOR 202	DF	.~.~.~.~ Gate structure constructed of diverse dielectrics (437/42)
FOR 203	DF	.~.~.~.~.~ Gate surrounded by dielectric layer, e.g., floating gate, etc. (437/43)
FOR 204	DF	.~.~.~.~.~ Adjusting channel dimension (437/44)
FOR 205	DF	.~.~.~.~.~ Active step for controlling threshold voltage (437/45)
FOR 185	DF	.~.~.~.~.~ Self-aligned (437/41 R)
FOR 186	DD	.~.~.~.~.~ With bipolar (437/41 RBP)
FOR 187	DD	.~.~.~.~.~ CMOS (437/41 RCM)
FOR 188	DD	.~.~.~.~.~ Lightly doped drain (437/41 RLD)
FOR 189	DD	.~.~.~.~.~ Memory devices (437/41 RMM)
FOR 190	DD	.~.~.~.~.~ Asymmetrical FET (437/41 AS)
FOR 191	DD	.~.~.~.~.~ Channel specifics (437/41 CS)
FOR 192	DD	.~.~.~.~.~ DMOS/vertical FET (437/41 DM)
FOR 193	DD	.~.~.~.~.~ Gate specifics (437/41 GS)
FOR 194	DD	.~.~.~.~.~ Junction FET/static induction transistor (437/41 JF)
FOR 195	DD	.~.~.~.~.~ Layered channel (437/41 LC)
FOR 196	DD	.~.~.~.~.~ Specifics of metallization/contact (437/41 SM)
FOR 197	DD	.~.~.~.~.~ Recessed gate (Schottky falls below in SH) (437/41 RG)
FOR 198	DD	.~.~.~.~.~ Schottky gate/MESFET (437/41 SH)
FOR 199	DD	.~.~.~.~.~ Sidewall (437/41 SW)
FOR 200	DD	.~.~.~.~.~ Thin film transistor, inverted (437/41 TFI)
FOR 201	DD	.~.~.~.~.~ Thin film transistor (437/41 TFT)
FOR 174	DF	.~.~.~.~ Forming pair of device regions separated by gate structure, i.e., FET (437/40 R)
FOR 175	DD	.~.~.~.~ Asymmetrical FET (any asymmetry in S/D profile, gate spacing, etc.) (437/40 AS)
FOR 176	DD	.~.~.~.~ DMOS/vertical FET (437/40 DM)
FOR 177	DD	.~.~.~.~ Gate specific (specifics of gate insulator/structure/material/ contact) (437/40 GS)
FOR 178	DD	.~.~.~.~ Junction FET/static induction transistor (437/40 JF)
FOR 179	DD	.~.~.~.~ Layered channel (e.g., HEMT, MODFET, 2DEG, heterostructure FETS) (437/40 LC)
FOR 180	DD	.~.~.~.~ Recessed gate (437/40 RG)
FOR 181	DD	.~.~.~.~ Schottky gate/MESFET (controls over RG) (437/40 SH)
FOR 182	DD	.~.~.~.~ Sidewall (not LDD's) (437/40 SW)
FOR 183	DD	.~.~.~.~ Thin film transistor inverted/staggered (437/40 TFI)
FOR 184	DD	.~.~.~.~ Thin film transistor (437/40 TFT)
FOR 206	DF	.~.~.~ Into polycrystalline or polyamorphous regions (437/46)
FOR 207	DF	.~.~.~ Integrating active with passive devices (437/47)
FOR 208	DF	.~.~.~ Forming plural active devices in grid/array, e.g., RAMS/ROMS, etc. (437/48)
FOR 209	DF	.~.~.~.~ Having multiple-level electrodes (437/49)
FOR 210	DF	.~.~.~ Forming electrodes in laterally spaced relationships (437/50)
FOR 211	DF	.~ Making assemblies of plural individual devices having community feature, e.g., integrated circuit, electrical connection, etc. (437/51)
FOR 212	DF	.~.~ Memory devices (437/52)
FOR 213	DF	.~.~ Charge coupled devices (CCD) (437/53)
FOR 214	DF	.~.~ Diverse types (437/54)
FOR 215	DF	.~.~.~ Integrated injection logic (I2L) circuits (437/55)
FOR 216	DF	.~.~.~ Plural field effect transistors (CMOS) (437/56)
FOR 217	DF	.~.~.~.~ Complementary metal oxide having diverse conductivity source and drain regions (437/57)
FOR 218	DF	.~.~.~.~ Having like conductivity source and drain regions (437/58)
FOR 219	DF	.~.~.~ Including field effect transistor (437/59)
FOR 220	DF	.~.~.~ Including passive device (437/60)
FOR 221	DF	.~ Including isolation step (437/61)
FOR 222	DF	.~.~ By forming total dielectric isolation (437/62)
FOR 223	DF	.~.~ By forming vertical isolation combining dielectric and PN junction (437/63)
FOR 224	DF	.~.~ Using vertical dielectric (air-gap/insulator) and horizontal PN junction (437/64)
FOR 225	DF	.~.~.~ Grooved air-gap only (437/65)
FOR 226	DF	.~.~.~.~ V-groove (437/66)
FOR 227	DF	.~.~.~ Grooved and refilled with insulator (437/67)
FOR 228	DF	.~.~.~.~ V-groove (437/68)
FOR 229	DF	.~.~.~ Recessed oxide by localized oxidation (437/69)
FOR 230	DF	.~.~.~.~ Preliminary formation of guard ring (437/70)
FOR 231	DF	.~.~.~.~ Preliminary anodizing (437/71)
FOR 232	DF	.~.~.~.~ Preliminary etching of groove (437/72)
FOR 233	DF	.~.~.~.~.~ Using overhanging oxidation mask and pretreatment of recessed walls (437/ 73)
FOR 234	DF	.~.~ Isolation by PN junction only (437/74)
FOR 235	DF	.~.~.~ By diffusion from upper surface only (437/75)
FOR 236	DF	.~.~.~ By up-diffusion from substrate region and down diffusion into upper surface layer (437/76)
FOR 237	DF	.~.~.~.~ Substrate and epitaxial regions of same conductivity type, i.e., P or N (437/77)
FOR 238	DF	.~.~.~ By etching and refilling with semiconductor material having diverse conductivity (437/78)
FOR 239	DF	.~.~.~ Using polycrystalline region (437/79)
FOR 240	DF	.~ Shadow masking (437/80)
FOR 241	DF	.~ Doping during fluid growth of semiconductor material on substrate (437/81)
FOR 242	DF	.~.~ Including heat to anneal (437/82)
FOR 243	DF	.~.~ Growing single crystal on amorphous substrate (437/83)
FOR 244	DF	.~.~ Growing single crystal on single crystal insulator (SOS) (437/84)
FOR 245	DF	.~.~ Including purifying stage during growth (437/85)
FOR 246	DF	.~.~ Using transitory substrate (437/86)
FOR 247	DF	.~.~ Using inert atmosphere (437/87)
FOR 248	DF	.~.~ Using catalyst to alter growth process (437/88)
FOR 249	DF	.~.~ Growth through opening (437/89)
FOR 250	DF	.~.~.~ Forming recess in substrate and refilling (437/90)
FOR 251	DF	.~.~.~.~ By liquid phase epitaxy (437/91)
FOR 252	DF	.~.~.~ By liquid phase epitaxy (437/92)
FOR 253	DF	.~.~ Specified crystal orientation other than (100) or (111) planes (437/93)
FOR 254	DF	.~.~ Introducing minority carrier life time reducing dopant during growth, i.e., deep level dopant Au (Gold), Cr (Cromium), Fe (Iron), Ni (Nickel), etc. (437/94)
FOR 255	DF	.~.~ Autodoping control (437/95)
FOR 256	DF	.~.~.~ Compound formed from Group III and Group V elements (437/96)
FOR 257	DF	.~.~ Forming buried regions with outdiffusion control (437/97)
FOR 258	DF	.~.~.~ Plural dopants simultaneously outdiffusioned (437/98)
FOR 259	DF	.~.~ Growing mono and polycrystalline regions simultaneously (437/99)
FOR 260	DF	.~.~ Growing silicon carbide (SiC) (437/100)
FOR 261	DF	.~.~ Growing amorphous semiconductor material (437/101)
FOR 262	DF	.~.~ Source and substrate in close-space relationship (437/102)
FOR 263	DF	.~.~.~ Group IV elements (437/103)
FOR 264	DF	.~.~.~ Compound formed from Group III and Group V elements (437/104)
FOR 265	DF	.~.~ Vacuum growing using molecular beam, i.e., vacuum deposition (437/105)
FOR 266	DF	.~.~.~ Group IV elements (437/106)
FOR 267	DF	.~.~.~ Compound formed from Group III and Group V elements (437/107)
FOR 268	DF	.~.~ Growing single layer in multi-steps (437/108)
FOR 269	DF	.~.~.~ Polycrystalline layers (437/109)
FOR 270	DF	.~.~.~ Using modulated dopants or materials, e.g., superlattice, etc. (437/110)
FOR 271	DF	.~.~.~ Using preliminary or intermediate metal layer (437/111)
FOR 272	DF	.~.~.~ Growing by varying rates (437/112)
FOR 273	DF	.~.~ Using electric current, e.g., Peltier effect, glow discharge, etc. (437/ 113)
FOR 274	DF	.~.~ Using seed in liquid phase (437/114)
FOR 275	DF	.~.~.~ Pulling from melt (437/115)
FOR 276	DF	.~.~.~.~ And diffusing (437/116)
FOR 277	DF	.~.~ Liquid and vapor phase epitaxy in sequence (437/117)
FOR 278	DF	.~.~ Involving capillary action (437/118)
FOR 279	DF	.~.~ Sliding liquid phase epitaxy (437/119)
FOR 280	DF	.~.~.~ Modifying melt composition (437/120)
FOR 281	DF	.~.~.~ Controlling volume or thickness of growth (437/121)
FOR 282	DF	.~.~.~ Preliminary dissolving substrate surface (437/122)
FOR 283	DF	.~.~.~ With nonlinear slide movement (437/123)
FOR 284	DF	.~.~.~ One melt simultaneously contacting plural substrates (437/124)
FOR 285	DF	.~.~ Tipping liquid phase epitaxy (437/125)
FOR 286	DF	.~.~ Heteroepitaxy (437/126)
FOR 287	DF	.~.~.~ Multi-color light emitting diode (LED) (437/127)
FOR 288	DF	.~.~.~ Graded composition (437/128)
FOR 289	DF	.~.~.~ Forming laser (437/129)
FOR 290	DF	.~.~.~ By liquid phase epitaxy (437/130)
FOR 291	DF	.~.~.~ Si (Silicon on Ge (Germanium) or Ge (Germanium) on Si (Silicon) (437/131)
FOR 292	DF	.~.~.~ Either Si (Silicon) or Ge (Germanium) layered with or on compound formed from Group III and Group V elements (437/132)
FOR 293	DF	.~.~.~ Compound formed from Group III and Group V elements on diverse Group III and Group V including substituted Group III and Group V compounds (437/133)
FOR 294	DF	.~ By fusing dopant with substrate, e.g., alloying, etc. (437/134)
FOR 295	DF	.~.~ Using flux (437/135)
FOR 296	DF	.~.~ Passing electric current through material (437/136)
FOR 297	DF	.~.~ With application of pressure to material during fusing (437/137)
FOR 298	DF	.~.~ Including plural controlled heating or cooling steps (437/138)
FOR 299	DF	.~.~ Including diffusion after fusion step (437/139)
FOR 300	DF	.~.~ Including additional material to improve wettability or flow characteristics (437/140)
FOR 301	DF	.~ Diffusing a dopant (437/141)
FOR 302	DF	.~.~ To control carrier lifetime, i.e., deep level dopant Au (Gold), Cr (Chromium), Fe (Iron), Ni (Nickel), etc. (437/142)
FOR 303	DF	.~.~ Al (Aluminum) dopant (437/143)
FOR 304	DF	.~.~ Li (Lithium) dopant (437/144)
FOR 305	DF	.~.~ Including nonuniform heating (437/145)
FOR 306	DF	.~.~ To solid state solubility concentration (437/146)
FOR 307	DF	.~.~ Using multiple layered mask (437/147)
FOR 308	DF	.~.~.~ Having plural predetermined openings in master mask (437/148)
FOR 309	DF	.~.~ Forming partially overlapping regions (437/149)
FOR 310	DF	.~.~ Plural dopants in same region, e.g., through same mask opening, etc. (437/150)
FOR 311	DF	.~.~.~ Simultaneously (437/151)
FOR 312	DF	.~.~ Plural dopants simultaneously in plural region (437/152)
FOR 313	DF	.~.~ Single dopant forming plural diverse regions (437/153)
FOR 314	DF	.~.~.~ Forming regions of different concentrations or different depths (437/154)
FOR 315	DF	.~.~ Using metal mask (437/155)
FOR 316	DF	.~.~ Outwardly (437/156)
FOR 317	DF	.~.~ Laterally under mask (437/157)
FOR 318	DF	.~.~ Edge diffusion by using edge portion of structure other than masking layer to mask (437/158)
FOR 319	DF	.~.~ From melt (437/159)
FOR 320	DF	.~.~ From solid dopant source in contact with substrate (437/160)
FOR 321	DF	.~.~.~ Using capping layer over dopant source to prevent outdiffusion of dopant (437/161)
FOR 322	DF	.~.~.~ Polycrystalline semiconductor source (437/162)
FOR 323	DF	.~.~.~ Organic source (437/163)
FOR 324	DF	.~.~.~ Glassy source or doped oxide (437/164)
FOR 325	DF	.~.~ From vapor phase (437/165)
FOR 326	DF	.~.~.~ In plural stages (437/166)
FOR 327	DF	.~.~.~ Zn (Zinc) dopant (437/167)
FOR 328	DF	.~.~.~ Solid source is operative relation with semiconductor material (437/168)
FOR 329	DF	.~.~.~.~ In capsule type enclosure (437/169)
FOR 330	DF	DIRECTLY APPLYING ELECTRICAL CURRENT (437/170)
FOR 331	DF	.~ And regulating temperature (437/171)
FOR 332	DF	.~ Alternating or pulsed current (437/172)
FOR 333	DF	APPLYING CORPUSCULAR OR ELECTROMAGNETIC ENERGY (437/173)
FOR 334	DF	.~ To anneal (437/174)
FOR 335	DF	FORMING SCHOTTKY CONTACT (437/175)
FOR 336	DF	.~ On semiconductor compound (437/176)
FOR 337	DF	.~.~ Multi-layer electrode (437/177)
FOR 338	DF	.~ Using platinum group silicide, i.e., silicide of Pt (Platinum), Pd (Palladium), Rh (Rhodium), Ru (Ruthenium), Ir (Iridium), Os (Osmium) (437/178)
FOR 339	DF	.~ Using metal, i.e., Pt (Platinum), Pd (Palladium), Rh (Rhodium), Ru (Ruthenium), Ir (Iridium), Os (Osmium), Au (Gold), Ag (Silver) (437/179)
FOR 340	DF	MAKING OR ATTACHING ELECTRODE ON OR TO SEMICONDUCTOR, OR SECURING COMPLETED SEMICONDUCTOR TO MOUNTING OR HOUSING (437/180)
FOR 341	DF	.~ Forming transparent electrode (437/181)
FOR 342	DF	.~ Forming beam electrode (437/182)
FOR 343	DF	.~ Forming bump electrode (437/183)
FOR 344	DF	.~ Electrode formed on substrate composed of elements of Group III and Group V semiconductor compound (437/184)
FOR 345	DF	.~ Electrode formed on substrate composed of elements of Group II and Group VI semiconductor compound (437/185)
FOR 346	DF	.~ Single polycrystalline electrode layer on substrate (437/186)
FOR 347	DF	.~ Single metal layer electrode on substrate (437/187)
FOR 348	DF	.~.~ Subsequently fusing, e.g., alloying, sintering, etc. (437/188)
FOR 349	DF	.~ Forming plural layered electrode (437/189)
FOR 350	DF	.~.~ Including central layer acting as barrier between outer layers (437/190)
FOR 351	DF	.~.~ Of polysilicon only (437/191)
FOR 352	DF	.~.~ Including refractory metal layer of Ti (Titanium), Zr (Zirconium), Hf (Hafnium), V (Vanadium), Nb (Niobium), Ta (Tantalum), Cr (Chromium), Mo (Molybdenum), W (Tungsten) (437/192)
FOR 353	DF	.~.~ Including polycrystalline silicon layer (437/193)
FOR 354	DF	.~.~ Including Al (Aluminum) layer (437/194)
FOR 355	DF	.~.~ Including layer separated by insulator (437/195)
FOR 356	DF	.~ Forming electrode of alloy or electrode of a compound of Si (Silicon) (437/196)
FOR 357	DF	.~.~ Al (Aluminum) alloy (437/197)
FOR 358	DF	.~.~.~ Including Cu (Copper) (437/198)
FOR 359	DF	.~.~.~ Including Si (Silicon) (437/199)
FOR 360	DF	.~.~ Silicide of Ti (Titanium), Zr (Zirconium), Hf (Hafnium), V (Vanadium), Nb (Niobium), Ta (Tantalum), Cr (Chromium), Mo (Molybdenum), W (Tungsten), (437/200)
FOR 361	DF	.~.~ Of plantinum metal group Ru (Ruthenium), Rh (Rhodium), Pd (Palladium), Os (Osmium), Ir (Iridium), Pt (Platinum) (437/201)
FOR 362	DF	.~.~ By fusing metal with semiconductor (alloying) (437/202)
FOR 363	DF	.~ Depositing electrode in preformed recess in substrate (437/203)
FOR 364	DF	.~ Including positioning of point contact (437/204)
FOR 365	DF	.~ Making plural devices (437/205)
FOR 366	DF	.~.~ Using strip lead frame (437/206)
FOR 367	DF	.~.~.~ And encapsulating (437/207)
FOR 368	DF	.~.~ Stacked array, e.g., rectifier, etc. (437/208)
FOR 369	DF	.~ Securing completed semiconductor to mounting, housing or external lead (437/209)
FOR 370	DF	.~.~ Including contaminant removal (437/210)
FOR 371	DF	.~.~ Utilizing potting or encapsulating material only to surround leads and device to maintain position, i.e. without housing (437/211)
FOR 372	DF	.~.~.~ Including application of pressure (437/212)
FOR 373	DF	.~.~.~ Glass material (437/213)
FOR 374	DF	.~.~ Utilizing header (molding surface means) (437/214)
FOR 375	DF	.~.~ Insulating housing (437/215)
FOR 376	DF	.~.~.~ Including application of pressure (437/216)
FOR 377	DF	.~.~.~ And lead frame (437/217)
FOR 378	DF	.~.~.~ Ceramic housing (437/218)
FOR 379	DF	.~.~.~ Including encapsulating (437/219)
FOR 380	DF	.~.~ Lead frame (437/220)
FOR 381	DF	.~.~ Metallic housing (437/221)
FOR 382	DF	.~.~.~ Including application of pressure (437/222)
FOR 383	DF	.~.~.~ Including glass support base (437/223)
FOR 384	DF	.~.~.~ Including encapsulating (437/224)
FOR 385	DF	INCLUDING COATING OR MATERIAL REMOVAL, E.G., ETCHING, GRINDING, ETC. (437/ 225)
FOR 386	DF	.~ Substrate dicing (437/226)
FOR 387	DF	.~.~ With a perfecting coating (437/227)
FOR 388	DF	.~ Coating and etching (437/228)
FOR 389	DF	.~ Of radiation resist layer (437/229)
FOR 390	DF	.~ By immersion metal plating from solution, i.e., electroless plating (437/230)
FOR 391	DF	.~ By spinning (437/231)
FOR 392	DF	.~ Elemental Se (Selenium) substrate or coating (437/232)
FOR 393	DF	.~ Of polycrystalline semiconductor material on substrate (437/233)
FOR 394	DF	.~.~ Semiconductor compound or mixed semiconductor material (437/234)
FOR 395	DF	.~ Of a dielectric or insulative material (437/235)
FOR 396	DF	.~.~ Containing Group III atom (437/236)
FOR 397	DF	.~.~.~ By reacting with substrate (437/237)
FOR 398	DF	.~.~ Monoxide or dioxide or Ge (Germanium) or Si (Silicon) (437/238)
FOR 399	DF	.~.~.~ By reacting with substrate (437/239)
FOR 400	DF	.~.~.~ Doped with impurities (437/240)
FOR 401	DF	.~.~ Si (Silicon) and N (Nitrogen) (437/241)
FOR 402	DF	.~.~.~ By chemical reaction with substrate (437/242)
FOR 403	DF	.~.~ Directly on semiconductor substrate (437/243)
FOR 404	DF	.~.~.~ By chemical conversion of substrate (437/244)
FOR 405	DF	.~ Comprising metal layer (437/245)
FOR 406	DF	.~.~ On metal (437/246)
FOR 407	DF	TEMPERATURE TREATMENT MODIFYING PROPERTIES OF SEMICONDUCTOR, E.G., ANNEALING, SINTERING, ETC. (437/247)
FOR 408	DF	.~ Heating and cooling (437/248)
FOR 409	DF	INCLUDING SHAPING (437/249)
FOR 410	DF	MISCELLANEOUS (437/250)
FOR 411	DF	UTILIZING PROCESS EQUIVALENTS OR OPTIONS (437/900)
FOR 412	DF	MAKING PRESSURE SENSITIVE DEVICE (437/901)
FOR 413	DF	MAKING DEVICE HAVING HEAT SINK (437/902)
FOR 414	DF	MAKING THERMOPILE (437/903)
FOR 415	DF	MAKING DIODE (437/904)
FOR 416	DF	.~ Light emmitting diode (437/905)
FOR 417	DF	.~.~ Mounting and contact (437/906)
FOR 418	DF	LASER PROCESSING OF FIELD EFFECT TRANSISTOR (FET) (437/907)
FOR 419	DF	LASER PROCESSING OF TRANSISTOR (437/908)
FOR 420	DF	MAKING TRANSISTOR ONLY (437/909)
FOR 421	DF	MAKING JOSEPHSON JUNCTION DEVICE (437/910)
FOR 422	DF	MAKING JUNCTION-FIELD EFFECT TRANSISTOR (J-FET) OR STATIC INDUCTION THYRSISTOR (SIT) DEVICE (437/911)
FOR 423	DF	MAKING METAL SEMICONDUCTOR FIELD EFFECT TRANSISTOR (MESFET) DEVICE ONLY (437/912)
FOR 424	DF	MAKING METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR (MOSFET) DEVICE (437/913)
FOR 425	DF	MAKING NON-EPITAXIAL DEVICE (437/914)
FOR 426	DF	MAKING VERTICALLY STACKED DEVICES (3-DIMENSIONAL STRUCTURE) (437/915)
FOR 427	DF	MAKING PHOTOCATHODE OR VIDICON (437/916)
FOR 428	DF	MAKING LATERAL TRANSISTOR (437/917)
FOR 429	DF	MAKING RESISTOR (437/918)
FOR 430	DF	MAKING CAPACITOR (437/919)
FOR 431	DF	MAKING SILICON-OXIDE-NITRIDE-OXIDE ON SILICON (SONOS) DEVICE (437/920)
FOR 432	DF	MAKING STRAIN GAGE (437/921)
FOR 433	DF	MAKING FUSE OR FUSABLE DEVICE (437/922)
FOR 434	DF	WITH REPAIR OR RECOVERY OF DEVICE (437/923)
FOR 435	DF	HAVING SUBSTRATE OR MASK ALIGNING FEATURE (437/924)
FOR 436	DF	SUBSTRATE SUPPORT OR CAPSULE CONSTRUCTION (437/925)
FOR 437	DF	CONTINUOUS PROCESSING (437/926)
FOR 438	DF	FORMING HOLLOW BODIES AND ENCLOSED CAVITIES (437/927)
FOR 439	DF	ENERGY BEAM TREATING RADIATION RESIST ON SEMICONDUCTOR (437/928)
FOR 440	DF	RADIATION ENHANCED DIFFUSION (R.E.D.) (437/929)
FOR 441	DF	ION BEAM SOURCE AND GENERATION (437/930)
FOR 442	DF	IMPLANTATION THROUGH MASK (437/931)
FOR 443	DF	RECOIL IMPLANTATION (437/932)
FOR 444	DF	DUAL SPECIES IMPLANTATION OF SEMICONDUCTOR (437/933)
FOR 445	DF	DOPANT ACTIVATION PROCESS (437/934)
FOR 446	DF	BEAM WRITING OF PATTERNS (437/935)
FOR 447	DF	BEAM PROCESSING OF COMPOUND SEMICONDUCTOR DEVICE (437/936)
FOR 448	DF	HYDROGEN PLASMA TREATMENT OF SEMICONDUCTOR DEVICE (437/937)
FOR 449	DF	MAKING RADIATION RESISTANT DEVICE (437/938)
FOR 450	DF	DEFECT CONTROL OF SEMICONDUCTOR WAFER (PRETREATMENT) (437/939)
FOR 451	DF	SELECTIVE OXIDATION OF ION AMORPHOUSIZED LAYERS (437/940)
FOR 452	DF	CONTROLLING CHARGING STATE AT SEMICONDUCTOR-INSULATOR INTERFACE (437/941)
FOR 453	DF	INCOHERENT LIGHT PROCESSING (437/942)
FOR 454	DF	THERMALLY ASSISTED BEAM PROCESSING (437/943)
FOR 455	DF	UTILIZING LIFT OFF (437/944)
FOR 456	DF	STOICHIOMETRIC CONTROL OF HOST SUBSTRATE COMPOSITION (437/945)
FOR 457	DF	SUBSTRATE SURFACE PREPARATION (437/946)
FOR 458	DF	FORMING TAPERED EDGES ON SUBSTRATE OR ADJACENT LAYERS (437/947)
FOR 459	DF	MOVABLE MASK (437/948)
FOR 460	DF	CONTROLLED ATMOSPHERE (437/949)
FOR 461	DF	SHALLOW DIFFUSION (437/950)
FOR 462	DF	AMPHOTERIC DOPING (437/951)
FOR 463	DF	CONTROLLING DIFFUSION PROFILE BY OXIDATION (437/952)
FOR 464	DF	DIFFUSION OF OVERLAPPING REGIONS (COMPENSATION) (437/953)
FOR 465	DF	VERTICAL DIFFUSION THROUGH A LAYER (437/954)
FOR 466	DF	NONSELECTIVE DIFFUSION (437/955)
FOR 467	DF	DISPLACING P-N JUNCTION (437/956)
FOR 468	DF	ELECTROMIGRATION (437/957)
FOR 469	DF	SHAPED JUNCTION FORMATION (437/958)
FOR 470	DF	USING NONSTANDARD DOPANT (437/959)
FOR 471	DF	WASHED EMITTER PROCESS (437/960)
FOR 472	DF	EMITTER DIP PREVENTION (OR UTILIZATION) (437/961)
FOR 473	DF	UTILIZING SPECIAL MASKS (CARBON, ETC.) (437/962)
FOR 474	DF	LOCALIZED HEATING CONTROL DURING FLUID GROWTH (437/963)
FOR 475	DF	FLUID GROWTH INVOLVING VAPOR-LIQUID-SOLID STAGES (437/964)
FOR 476	DF	FLUID GROWTH OF COMPOUNDS COMPOSED OF GROUPS II, IV, OR VI ELEMENTS (437/965)
FOR 477	DF	FORMING THIN SHEETS (437/966)
FOR 478	DF	PRODUCING POLYCRYSTALLINE SEMICONDUCTOR MATERIAL (437/967)
FOR 479	DF	SELECTIVE OXIDATION OF POLYCRYSTALLINE LAYER (437/968)
FOR 480	DF	FORMING GRADED ENERGY GAP LAYERS (437/969)
FOR 481	DF	DIFFERENTIAL CRYSTAL GROWTH (437/970)
FOR 482	DF	FLUID GROWTH DOPING CONTROL (437/971)
FOR 483	DF	UTILIZING MELT-BACK (437/972)
FOR 484	DF	SOLID PHASE EPITAXIAL GROWTH (437/973)
FOR 485	DF	THINNING OR REMOVAL OF SUBSTRATE (437/974)
FOR 486	DF	DIFFUSION ALONG GRAIN BOUNDARIES (437/975)
FOR 487	DF	CONTROLLING LATTICE STRAIN (437/976)
FOR 488	DF	UTILIZING ROUGHENED SURFACE (437/977)
FOR 489	DF	UTILIZING MULTIPLE DIELECTRIC LAYERS (437/978)
FOR 490	DF	UTILIZING THICK-THIN OXIDE FORMATION (437/979)
FOR 491	DF	FORMING POLYCRYSTALLINE SEMICONDUCTOR PASSIVATION (437/980)
FOR 492	DF	PRODUCING TAPERED ETCHING (437/981)
FOR 493	DF	REFLOW OF INSULATOR (437/982)
FOR 494	DF	OXIDATION OF GATE OR GATE CONTACT LAYER (437/983)
FOR 495	DF	SELF-ALIGNING FEATURE (437/984)
FOR 496	DF	DIFFERENTIAL OXIDATION AND ETCHING (437/985)
FOR 497	DF	DIFFUSING LATERALLY AND ETCHING (437/986)
FOR 498	DF	DIFFUSING DOPANTS IN COMPOUND SEMICONDUCTOR (437/987)

US Patent Class 438 SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

Current as of: June, 1999 Click for Main Headings Click DF for Definitions Click for All Classes

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US Patent Class 438
SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

Current as of: June, 1999
Click for Main Headings
Click DF for Definitions
Click for All Classes