US PATENT SUBCLASS 438 / FOR 216
.~.~.~ Plural field effect transistors (CMOS) (437/56)

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

FOR 149  DF  INCLUDING FORMING A SEMICONDUCTOR JUNCTION (437/15) {7}
FOR 211  DF  .~ Making assemblies of plural individual devices having community feature, e.g., integrated circuit, electrical connection, etc. (437/51) {3}
FOR 214  DF  .~.~ Diverse types (437/54) {4}
FOR 216.~.~.~ Plural field effect transistors (CMOS) (437/56) {2}
FOR 217  DF  .~.~.~.~> Complementary metal oxide having diverse conductivity source and drain regions (437/57)
FOR 218  DF  .~.~.~.~> Having like conductivity source and drain regions (437/58)

DEFINITION

Classification: 438/FOR.216

Plural field effect transistors (CMOS):

Foreign art collection for a process wherein different types of field effect transistors are produced.