US PATENT SUBCLASS 438 / FOR 149
INCLUDING FORMING A SEMICONDUCTOR JUNCTION (437/15)

Current as of: June, 1999
Click HD for Main Headings
Click for All Classes

Internet Version by PATENTEC © 1999      Terms of Use


438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

FOR 149INCLUDING FORMING A SEMICONDUCTOR JUNCTION (437/15) {7}
FOR 150  DF  .~> Using energy beam to introduce dopant or modify dopant distribution (437/ 16) {5}
FOR 211  DF  .~> Making assemblies of plural individual devices having community feature, e.g., integrated circuit, electrical connection, etc. (437/51) {3}
FOR 221  DF  .~> Including isolation step (437/61) {4}
FOR 240  DF  .~> Shadow masking (437/80)
FOR 241  DF  .~> Doping during fluid growth of semiconductor material on substrate (437/81) {25}
FOR 294  DF  .~> By fusing dopant with substrate, e.g., alloying, etc. (437/134) {6}
FOR 301  DF  .~> Diffusing a dopant (437/141) {17}

DEFINITION

Classification: 438/FOR.149

INCLUDING FORMING A SEMICONDUCTOR JUNCTION:

Foreign art collection for a process including the step of providing a region of transition between two types of material differing in impurity characteristics (e.g., p and n type) in a semiconductor.