US PATENT SUBCLASS 438 / FOR 156
.~.~.~ Of semiconductor compound (437/22)

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

FOR 149  DF  INCLUDING FORMING A SEMICONDUCTOR JUNCTION (437/15) {7}
FOR 150  DF  .~ Using energy beam to introduce dopant or modify dopant distribution (437/ 16) {5}
FOR 155  DF  .~.~ Of semiconductor on insulating substrate (437/21) {14}
FOR 156.~.~.~ Of semiconductor compound (437/22) {1}
FOR 157  DF  .~.~.~.~> Light emitting diode (LED) (437/23)

DEFINITION

Classification: 438/FOR.156

Of semiconductor compound:

Foreign art collection for processes wherein the substrate is a semiconductor composed of at least two different elements in a stoichiometric proportions having an energy gap between conduction and valence bands (generally of the order of 1 ev), e.g., III-V, II-VI and the substitute compositions thereof.