| 438 / | HD | SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS |
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| FOR 149 | DF | INCLUDING FORMING A SEMICONDUCTOR JUNCTION (437/15) {7} |
| FOR 150 | DF | .~ Using energy beam to introduce dopant or modify dopant distribution (437/ 16) {5} |
| FOR 155 |  | .~.~ Of semiconductor on insulating substrate (437/21) {14} |
| FOR 156 | DF | .~.~.~> Of semiconductor compound (437/22) {1} |
| FOR 158 | DF | .~.~.~> Providing nondopant ion including proton (437/24) |
| FOR 159 | DF | .~.~.~> Providing auxiliary heating (437/25) |
| FOR 160 | DF | .~.~.~> Forming buried region (437/26) |
| FOR 161 | DF | .~.~.~> Including multiple implantations of same region (437/27) {4} |
| FOR 169 | DF | .~.~.~> Using oblique beam (437/35) |
| FOR 170 | DF | .~.~.~> Using shadow mask (437/36) |
| FOR 171 | DF | .~.~.~> Having projected range less than thickness of dielectrics on substrate (437/37) |
| FOR 172 | DF | .~.~.~> Into shaped or grooved semiconductor substrate (437/38) |
| FOR 173 | DF | .~.~.~> Involving Schottky contact formation (437/39) {12} |
| FOR 206 | DF | .~.~.~> Into polycrystalline or polyamorphous regions (437/46) |
| FOR 207 | DF | .~.~.~> Integrating active with passive devices (437/47) |
| FOR 208 | DF | .~.~.~> Forming plural active devices in grid/array, e.g., RAMS/ROMS, etc. (437/48) {1} |
| FOR 210 | DF | .~.~.~> Forming electrodes in laterally spaced relationships (437/50) |