US PATENT SUBCLASS 438 / FOR 150
.~ Using energy beam to introduce dopant or modify dopant distribution (437/ 16)

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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

FOR 149  DF  INCLUDING FORMING A SEMICONDUCTOR JUNCTION (437/15) {7}
FOR 150.~ Using energy beam to introduce dopant or modify dopant distribution (437/ 16) {5}
FOR 151  DF  .~.~> Neutron, gamma ray or electron beam (437/17)
FOR 152  DF  .~.~> Ionized molecules (437/18)
FOR 153  DF  .~.~> Coherent light beam (437/19)
FOR 154  DF  .~.~> Ion beam implantation (437/20)
FOR 155  DF  .~.~> Of semiconductor on insulating substrate (437/21) {14}

DEFINITION

Classification: 438/FOR.150

Using energy beam to introduce dopant or modify dopant distribution:

Foreign art collection for a process wherein the substrate is subjected to specified energy beams which are the dopant carrier, dopant modifier, the source of energy for controlled drive-in of dopant or thermal treatment of the same.