US PATENT SUBCLASS 438 / FOR 264
.~.~.~ Compound formed from Group III and Group V elements (437/104)

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

FOR 149  DF  INCLUDING FORMING A SEMICONDUCTOR JUNCTION (437/15) {7}
FOR 241  DF  .~ Doping during fluid growth of semiconductor material on substrate (437/81) {25}
FOR 262  DF  .~.~ Source and substrate in close-space relationship (437/102) {2}
FOR 264.~.~.~ Compound formed from Group III and Group V elements (437/104)

DEFINITION

Classification: 438/FOR.264

Compound formed from Group III and Group V elements:

Foreign art collection for processes involving use of a compound made from elements of Groups III, B (Boron), Al (Aluminum), Ga (Gallium), In (Indium), etc. and Group V, O (Oxygen), S (sulfur), Se (Selenium), Te (Tellurium), etc.