US PATENT SUBCLASS 438 / FOR 262
.~.~ Source and substrate in close-space relationship (437/102)

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

FOR 149  DF  INCLUDING FORMING A SEMICONDUCTOR JUNCTION (437/15) {7}
FOR 241  DF  .~ Doping during fluid growth of semiconductor material on substrate (437/81) {25}
FOR 262.~.~ Source and substrate in close-space relationship (437/102) {2}
FOR 263  DF  .~.~.~> Group IV elements (437/103)
FOR 264  DF  .~.~.~> Compound formed from Group III and Group V elements (437/104)

DEFINITION

Classification: 438/FOR.262

Source and substrate in close-space relationship:

Foreign art collection for processes wherein the dopant

material and the base material in a near touching relationship.