US PATENT SUBCLASS 438 / FOR 241
.~ Doping during fluid growth of semiconductor material on substrate (437/81)

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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

FOR 149  DF  INCLUDING FORMING A SEMICONDUCTOR JUNCTION (437/15) {7}
FOR 241.~ Doping during fluid growth of semiconductor material on substrate (437/81) {25}
FOR 242  DF  .~.~> Including heat to anneal (437/82)
FOR 243  DF  .~.~> Growing single crystal on amorphous substrate (437/83)
FOR 244  DF  .~.~> Growing single crystal on single crystal insulator (SOS) (437/84)
FOR 245  DF  .~.~> Including purifying stage during growth (437/85)
FOR 246  DF  .~.~> Using transitory substrate (437/86)
FOR 247  DF  .~.~> Using inert atmosphere (437/87)
FOR 248  DF  .~.~> Using catalyst to alter growth process (437/88)
FOR 249  DF  .~.~> Growth through opening (437/89) {2}
FOR 253  DF  .~.~> Specified crystal orientation other than (100) or (111) planes (437/93)
FOR 254  DF  .~.~> Introducing minority carrier life time reducing dopant during growth, i.e., deep level dopant Au (Gold), Cr (Cromium), Fe (Iron), Ni (Nickel), etc. (437/94)
FOR 255  DF  .~.~> Autodoping control (437/95) {1}
FOR 257  DF  .~.~> Forming buried regions with outdiffusion control (437/97) {1}
FOR 259  DF  .~.~> Growing mono and polycrystalline regions simultaneously (437/99)
FOR 260  DF  .~.~> Growing silicon carbide (SiC) (437/100)
FOR 261  DF  .~.~> Growing amorphous semiconductor material (437/101)
FOR 262  DF  .~.~> Source and substrate in close-space relationship (437/102) {2}
FOR 265  DF  .~.~> Vacuum growing using molecular beam, i.e., vacuum deposition (437/105) {2}
FOR 268  DF  .~.~> Growing single layer in multi-steps (437/108) {4}
FOR 273  DF  .~.~> Using electric current, e.g., Peltier effect, glow discharge, etc. (437/ 113)
FOR 274  DF  .~.~> Using seed in liquid phase (437/114) {1}
FOR 277  DF  .~.~> Liquid and vapor phase epitaxy in sequence (437/117)
FOR 278  DF  .~.~> Involving capillary action (437/118)
FOR 279  DF  .~.~> Sliding liquid phase epitaxy (437/119) {5}
FOR 285  DF  .~.~> Tipping liquid phase epitaxy (437/125)
FOR 286  DF  .~.~> Heteroepitaxy (437/126) {7}

DEFINITION

Classification: 438/FOR.241

Doping during fluid growth of semiconductor material on substrate:

Foreign art collection for processes for growing a layer of semiconductor material from a liquid or gaseous medium and at the same time adding an impurity (p- or n-type).