US PATENT SUBCLASS 438 / 323
.~.~ Having common active region (i.e., integrated injection logic (I2L), etc.)

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

309  DF  FORMING BIPOLAR TRANSISTOR BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {25}
322  DF  .~ Complementary bipolar transistors {3}
323.~.~ Having common active region (i.e., integrated injection logic (I2L), etc.) {2}
324  DF  .~.~.~> Including additional electrical device
325  DF  .~.~.~> Having lateral bipolar transistor

DEFINITION

Classification: 438/323

Having common active region (i.e., integrated injection logic (I[supscrpt]2[end supscrpt]L), etc.):

(under subclass 322) Process for making complementary bipolar transistors which possess a common active region.