US PATENT SUBCLASS 438 / 325
.~.~.~ Having lateral bipolar transistor

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

309  DF  FORMING BIPOLAR TRANSISTOR BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {25}
322  DF  .~ Complementary bipolar transistors {3}
323  DF  .~.~ Having common active region (i.e., integrated injection logic (I2L), etc.) {2}
325.~.~.~ Having lateral bipolar transistor

DEFINITION

Classification: 438/325

Having lateral bipolar transistor:

(under subclass 323) Process for making complementary bipolar transistors with shared common region wherein at least one of the bipolar transistors has a horizontal structure resulting in current flow between its emitter and collector parallel to a major surface of the semiconductor substrate.