US PATENT SUBCLASS 438 / 322
.~ Complementary bipolar transistors

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

309  DF  FORMING BIPOLAR TRANSISTOR BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {25}
322.~ Complementary bipolar transistors {3}
323  DF  .~.~> Having common active region (i.e., integrated injection logic (I2L), etc.) {2}
326  DF  .~.~> Including additional electrical device
327  DF  .~.~> Having lateral bipolar transistor

DEFINITION

Classification: 438/322

Complementary bipolar transistors:

(under subclass 309) Process for making plural bipolar transistors wherein the emitter and collector regions or a first bipolar transistor are of opposite conductivity type to the emitter and collector regions of a second bipolar transistor.