US PATENT SUBCLASS 438 / 327
.~.~ Having lateral bipolar transistor

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

309  DF  FORMING BIPOLAR TRANSISTOR BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {25}
322  DF  .~ Complementary bipolar transistors {3}
327.~.~ Having lateral bipolar transistor

DEFINITION

Classification: 438/327

Having lateral bipolar transistor:

(under subclass 322) Process for making complementary bipolar transistors wherein at least one of the bipolar transistors has a horizontal structure resulting in current flow between its emitter and collector parallel to a major surface of the semiconductor substrate.