US PATENT SUBCLASS 438 / 309
FORMING BIPOLAR TRANSISTOR BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

309FORMING BIPOLAR TRANSISTOR BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {25}
310  DF  .~> Gettering of semiconductor substrate
311  DF  .~> On insulating substrate or layer (i.e., SOI type)
312  DF  .~> Having heterojunction {7}
322  DF  .~> Complementary bipolar transistors {3}
328  DF  .~> Including diode
329  DF  .~> Including passive device (e.g., resistor, capacitor, etc.) {1}
333  DF  .~> Having fuse or integral short
334  DF  .~> Forming inverted transistor structure
335  DF  .~> Forming lateral transistor structure {4}
340  DF  .~> Making plural bipolar transistors of differing electrical characteristics
341  DF  .~> Using epitaxial lateral overgrowth
342  DF  .~> Having multiple emitter or collector structure
343  DF  .~> Mesa or stacked emitter
344  DF  .~> Washed emitter
345  DF  .~> Walled emitter
346  DF  .~> Emitter dip prevention or utilization
347  DF  .~> Permeable or metal base
348  DF  .~> Sidewall base contact
349  DF  .~> Pedestal base
350  DF  .~> Forming base region of specified dopant concentration profile (e.g., inactive base region more heavily doped than active base region, etc.)
351  DF  .~> Direct application of electrical current
352  DF  .~> Fusion or solidification of semiconductor region
353  DF  .~> Including isolation structure {5}
364  DF  .~> Self-aligned {2}
378  DF  .~> Radiation or energy treatment modifying properties of semiconductor regions of substrate (e.g., thermal, corpuscular, electromagnetic, etc.)

DEFINITION

Classification: 438/309

FORMING BIPOLAR TRANSISTOR BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS:

(under the class definition) Process for forming a transistor structure which upon completion possesses a base region separating two or more active regions and in which both positive and negative charge carriers are used to support current flow.

(1) Note. To be proper hereunder, the claim must include a positive recitation of (a) formation of semiconductive active regions or (b) altering the electrical properties of active semiconductive regions of the substrate.

(2) Note. The regions of a bipolar transistor are commonly referred to as collector, base, and emitter. A bipolar device may alternatively be identified by the semiconductive regions from which the device is formed (i.e., a NPN or PNP device). [figure]

SEE OR SEARCH THIS CLASS, SUBCLASS:

170, for a process of making a Schottky gate field effect transistor combined with a bipolar transistor.

189, for a process of making a junction gate field effect transistor combined with a bipolar transistor.

202, for a process of making complementary insulated gate field effect transistors combined with a bipolar transistor. 234, for a process of making an insulated gate field effect transistor combined with a bipolar transistor.

SEE OR SEARCH CLASS

257, Active Solid-State Devices (e.g., Transistors, Solid-State Diodes),

47, 197, 205, 273, 350, 361, 370, 378, 423, 462, 477+, 511, 512, 517, 518, 525, 526, 539+, and 552+ for a bipolar transistor structure.