US PATENT SUBCLASS 438 / 311
.~ On insulating substrate or layer (i.e., SOI type)

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

309  DF  FORMING BIPOLAR TRANSISTOR BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {25}
311.~ On insulating substrate or layer (i.e., SOI type)

DEFINITION

Classification: 438/311

On insulating substrate or layer (i.e., SOI type):

(under subclass 309) Process for making a bipolar transistor wherein the transistor is formed upon an insulating substrate (e.g., glass, sapphire, etc.) or layer.