US PATENT SUBCLASS 438 / 353
.~ Including isolation structure

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

309  DF  FORMING BIPOLAR TRANSISTOR BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {25}
353.~ Including isolation structure {5}
354  DF  .~.~> Having semi-insulative region
355  DF  .~.~> Total dielectrical isolation
356  DF  .~.~> Isolation by PN junction only {1}
359  DF  .~.~> Dielectric isolation formed by grooving and refilling with dielectrical material {2}
362  DF  .~.~> Recessed oxide by localized oxidation (i.e., LOCOS) {1}

DEFINITION

Classification: 438/353

Including isolation structure:

(under subclass 309) Process for making a bipolar transistor having a structure which serves to at least partially electrically isolate the semiconductive region in which the transistor is formed from laterally adjacent semiconductive regions.

SEE OR SEARCH THIS CLASS, SUBCLASS:

400, for processes of forming an electrically isolated lateral semiconductor structure utilizing dielectric or junction isolation without a step of bipolar transistor manufacture.