US PATENT SUBCLASS 438 / 356
.~.~ Isolation by PN junction only

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

309  DF  FORMING BIPOLAR TRANSISTOR BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {25}
353  DF  .~ Including isolation structure {5}
356.~.~ Isolation by PN junction only {1}
357  DF  .~.~.~> Including epitaxial semiconductor layer formation {1}

DEFINITION

Classification: 438/356

Isolation by PN junction only:

(under subclass 353) Process for making a bipolar transistor in a semiconductive region which is completely electrically isolated from laterally spaced regions of the semiconductor substrate solely through the use of properly biased PN junctions. [figure]