US PATENT SUBCLASS 438 / 357
.~.~.~ Including epitaxial semiconductor layer formation

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

309  DF  FORMING BIPOLAR TRANSISTOR BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {25}
353  DF  .~ Including isolation structure {5}
356  DF  .~.~ Isolation by PN junction only {1}
357.~.~.~ Including epitaxial semiconductor layer formation {1}
358  DF  .~.~.~.~> Up diffusion of dopant from substrate into epitaxial layer

DEFINITION

Classification: 438/357

Including epitaxial semiconductor layer formation:

(under subclass 356) Process for making a junction isolated bipolar transistor utilizing the formation of an epitaxial semiconductor layer.