US PATENT SUBCLASS 438 / 362
.~.~ Recessed oxide by localized oxidation (i.e., LOCOS)

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

309  DF  FORMING BIPOLAR TRANSISTOR BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {25}
353  DF  .~ Including isolation structure {5}
362.~.~ Recessed oxide by localized oxidation (i.e., LOCOS) {1}
363  DF  .~.~.~> With epitaxial semiconductor layer formation

DEFINITION

Classification: 438/362

Recessed oxide by localized oxidation (i.e., LOCOS):

(under subclass 353) Process for making a bipolar transistor including the step of oxidizing a portion of a semiconductive material to form an embedded oxide (i.e., field oxide) therein which forms the periphery of a semiconductive region utilized for the formation of the bipolar transistor.