US PATENT SUBCLASS 438 / 359
.~.~ Dielectric isolation formed by grooving and refilling with dielectrical material

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

309  DF  FORMING BIPOLAR TRANSISTOR BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {25}
353  DF  .~ Including isolation structure {5}
359.~.~ Dielectric isolation formed by grooving and refilling with dielectrical material {2}
360  DF  .~.~.~> With epitaxial semiconductor formation in groove
361  DF  .~.~.~> Including deposition of polysilicon or noninsulative material into groove

DEFINITION

Classification: 438/359

Dielectric isolation formed by grooving and refilling with dielectrical material:

(under subclass 353) Process for making a bipolar transistor involving the formation of a recess in the semiconductor followed by the refilling of the recess with an insulative material.