US PATENT SUBCLASS 438 / 361
.~.~.~ Including deposition of polysilicon or noninsulative material into groove

Current as of: June, 1999
Click HD for Main Headings
Click for All Classes

Internet Version by PATENTEC © 1999      Terms of Use


438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

309  DF  FORMING BIPOLAR TRANSISTOR BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {25}
353  DF  .~ Including isolation structure {5}
359  DF  .~.~ Dielectric isolation formed by grooving and refilling with dielectrical material {2}
361.~.~.~ Including deposition of polysilicon or noninsulative material into groove

DEFINITION

Classification: 438/361

Including deposition of polysilicon or noninsulative material into groove:

(under subclass 359) Process for making a bipolar transistor wherein a noninsulative material is deposited into the groove in addition to the insulative material.