US PATENT SUBCLASS 438 / 360
.~.~.~ With epitaxial semiconductor formation in groove

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

309  DF  FORMING BIPOLAR TRANSISTOR BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {25}
353  DF  .~ Including isolation structure {5}
359  DF  .~.~ Dielectric isolation formed by grooving and refilling with dielectrical material {2}
360.~.~.~ With epitaxial semiconductor formation in groove

DEFINITION

Classification: 438/360

With epitaxial semiconductor formation in groove:

(under subclass 359) Process for making a bipolar transistor additionally involving the epitaxial deposition of a semiconductor material in the groove.