US PATENT SUBCLASS 438 / 341
.~ Using epitaxial lateral overgrowth


Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

309  DF  FORMING BIPOLAR TRANSISTOR BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {25}
341.~ Using epitaxial lateral overgrowth


DEFINITION

Classification: 438/341

Using epitaxial lateral overgrowth:

(under subclass 309) Process for making a bipolar transistor including forming a single crystalline semiconductor layer epitaxially on the semiconductor substrate and laterally over an insulative layer thereupon.

SEE OR SEARCH THIS CLASS, SUBCLASS:

481, for a process utilizing fluid growth or deposition of semiconductor active material onto an insulating layer by epitaxial lateral overgrowth.