US PATENT SUBCLASS 438 / 312
.~ Having heterojunction

Current as of: June, 1999
Click HD for Main Headings
Click for All Classes

Internet Version by PATENTEC © 1999      Terms of Use


438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

309  DF  FORMING BIPOLAR TRANSISTOR BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {25}
312.~ Having heterojunction {7}
313  DF  .~.~> Complementary bipolar transistors
314  DF  .~.~> And additional electrical device
315  DF  .~.~> Forming inverted transistor structure
316  DF  .~.~> Forming lateral transistor structure
317  DF  .~.~> Wide bandgap emitter
318  DF  .~.~> Including isolation structure {1}
320  DF  .~.~> Self-aligned {1}

DEFINITION

Classification: 438/312

Having heterojunction:

(under subclass 309) Process for making a bipolar transistor wherein the emitter-base or the collector-base junction is an interface of two dissimilar semiconductor materials resulting in a heterojunction therebetween.

SEE OR SEARCH THIS CLASS, SUBCLASS:

235, for a process of making an insulated gate field effect transistor combined with a heterojunction bipolar transistor.

SEE OR SEARCH CLASS

257, Active Solid-State Devices (e.g., Transistors, Solid-State Diodes),

197+, for a heterojunction bipolar transistor structure.