US PATENT SUBCLASS 438 / 315
.~.~ Forming inverted transistor structure

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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

309  DF  FORMING BIPOLAR TRANSISTOR BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {25}
312  DF  .~ Having heterojunction {7}
315.~.~ Forming inverted transistor structure

DEFINITION

Classification: 438/315

Forming inverted transistor structure:

(under subclass 312) Process forming a heterojunction bipolar transistor structure in which a semiconductor body such as a semiconductor substrate or a semiconductor layer is used as its emitter region, a first semiconductor region formed in the semiconductor body is used as the base region and a second semiconductor region formed in the first semiconductor region is used as the collector region.