(under subclass 312) Process for making a heterojunction bipolar transistor with an active region which involves a
charge carrier emitter region made of a semiconductor material having an energy gap between its conduction and valence band which is greater than the energy gap of the dissimilar semiconductor material of the base region.
SEE OR SEARCH CLASS
257, Active Solid-State Devices (e.g., Transistors, Solid-State Diodes),
198, for a wide band-gap emitter heterojunction bipolar transistor structure.
