US PATENT SUBCLASS 438 / 320
.~.~ Self-aligned

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

309  DF  FORMING BIPOLAR TRANSISTOR BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {25}
312  DF  .~ Having heterojunction {7}
320.~.~ Self-aligned {1}
321  DF  .~.~.~> Utilizing dummy emitter

DEFINITION

Classification: 438/320

Self-aligned:

(under subclass 312) Process for making a heterojunction bipolar transistor wherein a previously formed device feature is utilized to make device regions in the desired registration to the previously formed feature.