US PATENT SUBCLASS 438 / 321
.~.~.~ Utilizing dummy emitter

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

309  DF  FORMING BIPOLAR TRANSISTOR BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {25}
312  DF  .~ Having heterojunction {7}
320  DF  .~.~ Self-aligned {1}
321.~.~.~ Utilizing dummy emitter

DEFINITION

Classification: 438/321

Utilizing dummy emitter:

(under subclass 320) Process for making a heterojunction bipolar transistor wherein a substitute emitter is formed or removed prior to the forming of the active emitter region of the device.