US PATENT SUBCLASS 438 / 316
.~.~ Forming lateral transistor structure

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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

309  DF  FORMING BIPOLAR TRANSISTOR BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {25}
312  DF  .~ Having heterojunction {7}
316.~.~ Forming lateral transistor structure

DEFINITION

Classification: 438/316

Forming lateral transistor structure:

(under subclass 312) Process for making a heterojunction bipolar transistor which has a horizontal structure resulting in current flow between its emitter and collector parallel to a major surface of the semiconductor substrate.