US PATENT SUBCLASS 438 / 350
.~ Forming base region of specified dopant concentration profile (e.g., inactive base region more heavily doped than active base region, etc.)

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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

309  DF  FORMING BIPOLAR TRANSISTOR BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {25}
350.~ Forming base region of specified dopant concentration profile (e.g., inactive base region more heavily doped than active base region, etc.)

DEFINITION

Classification: 438/350

Forming base region of specified dopant concentration profile (e.g., inactive base region more heavily doped than active base region, etc.):

(under subclass 309) Process for making a bipolar transistor with a semiconductor base region possessing a specified concentration profile of an electrically active dopant species contained therein.

SEE OR SEARCH CLASS

257, Active Solid-State Devices (e.g., Transistors, Solid-State Diodes),

592, for a bipolar transistor device having a base region possessing specified doping concentration profile.