US PATENT SUBCLASS 438 / 334
.~ Forming inverted transistor structure

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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

309  DF  FORMING BIPOLAR TRANSISTOR BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {25}
334.~ Forming inverted transistor structure

DEFINITION

Classification: 438/334

Forming inverted transistor structure:

(under subclass 309) Process forming a bipolar transistor structure in which a semiconductor body such as a semiconductor substrate or a semiconductor layer is used as its emitter region, a first semiconductor region formed in the semiconductor body is used as the base region and a second semiconductor region formed in the first semiconductor region is used as the collector region.

SEE OR SEARCH THIS CLASS, SUBCLASS:

315, for a process of making a heterojunction bipolar transistor having an inverted structure.