US PATENT SUBCLASS 438 / 343
.~ Mesa or stacked emitter

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

309  DF  FORMING BIPOLAR TRANSISTOR BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {25}
343.~ Mesa or stacked emitter

DEFINITION

Classification: 438/343

Mesa or stacked emitter:

(under subclass 309) Process for making a bipolar transistor wherein the emitter is a raised feature relative to the adjoining semiconductive regions.

SEE OR SEARCH CLASS

257, Active Solid-State Devices (e.g., Transistors, Solid-State Diodes),

586, for a bipolar transistor structure with a nonplanar semiconductor surface (e.g., groove, mesa, bevel, etc.).