US PATENT SUBCLASS 438 / 335
.~ Forming lateral transistor structure

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

309  DF  FORMING BIPOLAR TRANSISTOR BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {25}
335.~ Forming lateral transistor structure {4}
336  DF  .~.~> Combined with vertical bipolar transistor
337  DF  .~.~> Active region formed along groove or exposed edge in semiconductor
338  DF  .~.~> Having multiple emitter or collector structure
339  DF  .~.~> Self-aligned

DEFINITION

Classification: 438/335

Forming lateral transistor structure:

(under subclass 309) Process for making a bipolar transistor wherein the transistor has a horizontal structure resulting in current flow between its emitter and collector parallel to a major surface of the semiconductor substrate.

SEE OR SEARCH THIS CLASS, SUBCLASS:

204, for a process of making complementary insulated gate field effect transistors combined with a lateral bipolar transistor.

236, for a process of making an insulated gate field effect transistor combined with a lateral bipolar transistor.

327, for a process of making a structure comprising complementary bipolar transistors one of which possesses a lateral transistor structure.

SEE OR SEARCH CLASS

257, Active Solid-State Devices (e.g., Transistors, Solid-State Diodes),

557+, for a lateral bipolar transistor structure.