US PATENT SUBCLASS 438 / 336
.~.~ Combined with vertical bipolar transistor

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

309  DF  FORMING BIPOLAR TRANSISTOR BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {25}
335  DF  .~ Forming lateral transistor structure {4}
336.~.~ Combined with vertical bipolar transistor

DEFINITION

Classification: 438/336

Combined with vertical bipolar transistor:

(under subclass 335) Process for making a lateral bipolar transistor combined with a vertical bipolar transistor having

current flow between its emitter and collector perpendicular to a major surface of the semiconductor substrate.