US PATENT SUBCLASS 438 / 337
.~.~ Active region formed along groove or exposed edge in semiconductor

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

309  DF  FORMING BIPOLAR TRANSISTOR BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {25}
335  DF  .~ Forming lateral transistor structure {4}
337.~.~ Active region formed along groove or exposed edge in semiconductor

DEFINITION

Classification: 438/337

Active region formed along groove or exposed edge in semiconductor:

(under subclass 335) Process for making a lateral bipolar transistor wherein the transistor has a recess or exposed edge and an active region of the transistor is formed along the recess or exposed edge.