US PATENT SUBCLASS 438 / 339
.~.~ Self-aligned


Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

309  DF  FORMING BIPOLAR TRANSISTOR BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {25}
335  DF  .~ Forming lateral transistor structure {4}
339.~.~ Self-aligned


DEFINITION

Classification: 438/339

Self-aligned:

(under subclass 335) Process for making a lateral bipolar transistor wherein a previously formed device feature is utilized to make device active regions in the desired registration to the previously formed feature.