US PATENT SUBCLASS 438 / 339
.~.~ Self-aligned
Current as of:
June, 1999
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438 /
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SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS
309
DF
FORMING BIPOLAR TRANSISTOR BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS
{25}
335
DF
.~ Forming lateral transistor structure {4}
339
.~.~ Self-aligned
DEFINITION
Classification: 438/339
Self-aligned:
(under subclass 335) Process for making a lateral bipolar transistor wherein a previously formed device feature is utilized to make device active regions in the desired registration to the previously formed feature.
