US PATENT SUBCLASS 438 / 348
.~ Sidewall base contact

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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

309  DF  FORMING BIPOLAR TRANSISTOR BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {25}
348.~ Sidewall base contact

DEFINITION

Classification: 438/348

Sidewall base contact:

(under subclass 309) Process for making a bipolar transistor wherein a conductive layer serving as the base electrode makes contact to the sidewall of the base region.