US PATENT SUBCLASS 438 / 346
.~ Emitter dip prevention or utilization

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

309  DF  FORMING BIPOLAR TRANSISTOR BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {25}
346.~ Emitter dip prevention or utilization

DEFINITION

Classification: 438/346

Emitter dip prevention or utilization:

(under subclass 309) Process involving special diffusion techniques to eliminate or utilize the tendency of the base-collector junction to "bulge" downward during the emitter diffusion.