| 438 / | HD | SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS |
|
| 584 | DF | COATING WITH ELECTRICALLY OR THERMALLY CONDUCTIVE MATERIAL {2} |
| 597 |  | .~ To form ohmic contact to semiconductive material {24} |
| 598 | DF | .~.~> Selectively interconnecting (e.g., customization, wafer scale integration, etc.) {3} |
| 602 | DF | .~.~> To compound semiconductor {2} |
| 607 | DF | .~.~> With epitaxial conductor formation |
| 608 | DF | .~.~> Oxidic conductor (e.g., indium tin oxide, etc.) {1} |
| 610 | DF | .~.~> Conductive macromolecular conductor (including metal powder filled composition) |
| 611 | DF | .~.~> Beam lead formation |
| 612 | DF | .~.~> Forming solder contact or bonding pad {1} |
| 618 | DF | .~.~> Contacting multiple semiconductive regions (i.e., interconnects) {5} |
| 652 | DF | .~.~> Plural layered electrode or conductor {5} |
| 658 | DF | .~.~> Altering composition of conductor {1} |
| 660 | DF | .~.~> Including heat treatment of conductive layer {2} |
| 665 | DF | .~.~> Utilizing textured surface |
| 666 | DF | .~.~> Specified configuration of electrode or contact {2} |
| 669 | DF | .~.~> And patterning of conductive layer {4} |
| 674 | DF | .~.~> Selective deposition of conductive layer {3} |
| 678 | DF | .~.~> Electroless deposition of conductive layer |
| 679 | DF | .~.~> Evaporative coating of conductive layer |
| 680 | DF | .~.~> Utilizing chemical vapor deposition (i.e., CVD) {1} |
| 682 | DF | .~.~> Silicide {1} |
| 684 | DF | .~.~> Electrically conductive polysilicon |
| 685 | DF | .~.~> Refractory group metal (i.e., titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), or alloy thereof) |
| 686 | DF | .~.~> Noble group metal (i.e., silver (Ag), gold (Au), platinum (Pt), palladium (Pd), rhodium (Rh), ruthenium (Ru), iridium (Ir), osmium (Os), or alloy thereof) |
| 687 | DF | .~.~> Copper of copper alloy conductor |
| 688 | DF | .~.~> Aluminum or aluminum alloy conductor |