US PATENT SUBCLASS 438 / 682
.~.~ Silicide

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

584  DF  COATING WITH ELECTRICALLY OR THERMALLY CONDUCTIVE MATERIAL {2}
597  DF  .~ To form ohmic contact to semiconductive material {24}
682.~.~ Silicide {1}
683  DF  .~.~.~> Of refractory group metal (i.e., titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), or alloy thereof)

DEFINITION

Classification: 438/682

Silicide:

(under subclass 597) Processes wherein the conductive material is formed by the chemical combination of Silicon (Si) with a metal atom.