US PATENT SUBCLASS 438 / 652
.~.~ Plural layered electrode or conductor

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

584  DF  COATING WITH ELECTRICALLY OR THERMALLY CONDUCTIVE MATERIAL {2}
597  DF  .~ To form ohmic contact to semiconductive material {24}
652.~.~ Plural layered electrode or conductor {5}
653  DF  .~.~.~> At least one layer forms a diffusion barrier
654  DF  .~.~.~> Having adhesion promoting layer
655  DF  .~.~.~> Silicide
656  DF  .~.~.~> Having refractory group metal (i.e., titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), or alloy thereof)
657  DF  .~.~.~> Having electrically conductive polysilicon component

DEFINITION

Classification: 438/652

Plural layered electrode or conductor:

(under subclass 597) Processes for making an ohmic contact to a semiconductor region involving the formation of multiple conductive layers of differing composition or electrical characteristics.