US PATENT SUBCLASS 438 / 531
.~.~ Using shadow mask

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

510  DF  INTRODUCTION OF CONDUCTIVITY MODIFYING DOPANT INTO SEMICONDUCTIVE MATERIAL {7}
514  DF  .~ Ion implantation of dopant into semiconductor region {12}
531.~.~ Using shadow mask

DEFINITION

Classification: 438/531

Using shadow mask:

(under subclass 514) Process involving the use of a spaced templet positioned with respect to the ion source and the semiconductor substrate in such a manner as to allow the electrically active dopant ions to impinge only a portion of the semiconductor substrate.