US PATENT SUBCLASS 438 / 514
.~ Ion implantation of dopant into semiconductor region

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

510  DF  INTRODUCTION OF CONDUCTIVITY MODIFYING DOPANT INTO SEMICONDUCTIVE MATERIAL {7}
514.~ Ion implantation of dopant into semiconductor region {12}
515  DF  .~.~> Ionized molecules
516  DF  .~.~> Including charge neutralization
517  DF  .~.~> Of semiconductor layer on insulating substrate or layer
518  DF  .~.~> Of compound semiconductor {3}
524  DF  .~.~> Into grooved semiconductor substrate region
525  DF  .~.~> Using oblique beam
526  DF  .~.~> Forming buried region
527  DF  .~.~> Including multiple implantation steps {2}
530  DF  .~.~> Including heat treatment
531  DF  .~.~> Using shadow mask
532  DF  .~.~> Into polycrystalline region
533  DF  .~.~> And contact formation (i.e., metallization) {1}

DEFINITION

Classification: 438/514

Ion implantation of dopant into semiconductor region:

(under subclass 510) Process involving penetration of the surface of the semiconductive regions of the substrate with electrically active dopant species possessing sufficient kinetic energy therefor, usually resulting in the formation of a barrier layer rectifying junction within the semiconductive regions.

(1) Note. Ion implantation involves the introduction of a desired dopant species into a semiconductive region of a substrate by ionizing the dopant material and accelerating the resulting ions through a carefully controlled voltage to impinge on the semiconductive region so that the depth of the resulting dopant atoms is determined by the accelerating

voltage and the doping density is determined by the flux of the ion beam.

SEE OR SEARCH THIS CLASS, SUBCLASS:

535, for the implantation of dopant ions into nonsemiconductive regions of the substrate and subsequent diffusion into semiconductive regions.

659, for the implantation of an ion into a metallic or conductive region of the substrate.

798, for the ionized irradiation of a semiconductor substrate to modify the properties of semiconductor regions contained therein.

SEE OR SEARCH CLASS 250, Radiant Energy,

492.1+, for generic processes of irradiating objects or material wherein no function is attributed to the implanted species.

427, Coating Processes,

523+, for a coating process involving ion plating or implantation (see especially subclass 527 when silicon is present in the substrate, plating, or implanted layer).

(1) Note. Processes utilizing ion bombardment or ion treating, that specifies neither implanting, etching, plating, etc., but merely recites some change as in the materials characteristic properties of the semiconductor substrate go as original to Class 438.