US PATENT SUBCLASS 438 / 525
.~.~ Using oblique beam

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

510  DF  INTRODUCTION OF CONDUCTIVITY MODIFYING DOPANT INTO SEMICONDUCTIVE MATERIAL {7}
514  DF  .~ Ion implantation of dopant into semiconductor region {12}
525.~.~ Using oblique beam

DEFINITION

Classification: 438/525

Using oblique beam:

(under subclass 514) Process wherein the angle of the ion beam relative to the major surface of the semiconductor substrate is other than 90 degrees.

SEE OR SEARCH THIS CLASS, SUBCLASS:

302, for a process of making an insulated gate field effect transistor having a step of self-aligned doping of source and/or drain regions via oblique ion implantation.