US PATENT SUBCLASS 438 / 527
.~.~ Including multiple implantation steps

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

510  DF  INTRODUCTION OF CONDUCTIVITY MODIFYING DOPANT INTO SEMICONDUCTIVE MATERIAL {7}
514  DF  .~ Ion implantation of dopant into semiconductor region {12}
527.~.~ Including multiple implantation steps {2}
528  DF  .~.~.~> Providing nondopant ion (e.g., proton, etc.)
529  DF  .~.~.~> Using same conductivity-type dopant

DEFINITION

Classification: 438/527

Including multiple implantation steps:

(under subclass 514) Process having plural steps of implanting ions, at least one step of which introduces an electrically active dopant ion, into a semiconductive substrate.