US PATENT SUBCLASS 438 / 517
.~.~ Of semiconductor layer on insulating substrate or layer

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

510  DF  INTRODUCTION OF CONDUCTIVITY MODIFYING DOPANT INTO SEMICONDUCTIVE MATERIAL {7}
514  DF  .~ Ion implantation of dopant into semiconductor region {12}
517.~.~ Of semiconductor layer on insulating substrate or layer

DEFINITION

Classification: 438/517

Of semiconductor layer on insulating substrate or layer:

(under subclass 514) Process wherein the electrically active dopant ions are implanted into a semiconductor layer or portion thereof, the semiconductor layer residing on an insulating substrate or layer.