US PATENT SUBCLASS 438 / 524
.~.~ Into grooved semiconductor substrate region

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

510  DF  INTRODUCTION OF CONDUCTIVITY MODIFYING DOPANT INTO SEMICONDUCTIVE MATERIAL {7}
514  DF  .~ Ion implantation of dopant into semiconductor region {12}
524.~.~ Into grooved semiconductor substrate region

DEFINITION

Classification: 438/524

Into grooved semiconductor substrate region:

(under subclass 514) Process wherein the electrically active dopant is implanted into a trench or recess formed in a semiconductor region of the substrate.

SEE OR SEARCH THIS CLASS, SUBCLASS:

389, for a process of making a trench capacitor including doping of the surfaces of the trench.

433, for a process of forming electrically isolated lateral semiconductor structure by forming a groove and refilling the same with dielectric material combined with a step of doping a semiconductor region of the substrate.

447, for a process of forming electrically isolated lateral semiconductor structure by forming a recessed oxide via localized oxidation combined with the preliminary etching of a groove and doping a semiconductor region of the substrate.