.~ Ion implantation of dopant into semiconductor region {12}
526
.~.~ Forming buried region
DEFINITION
Classification: 438/526
Forming buried region:
(under subclass 514) Process involving a step of producing a region implanted with an electrically active dopant which is not in contact with the free surface of the semiconductor substrate through which it was implanted.
(1) Note. The mere indication that the projected range (i.e., the average depth of the implanted ions) is of a particular value is insufficient for placement herein.
