US PATENT SUBCLASS 438 / 518
.~.~ Of compound semiconductor

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

510  DF  INTRODUCTION OF CONDUCTIVITY MODIFYING DOPANT INTO SEMICONDUCTIVE MATERIAL {7}
514  DF  .~ Ion implantation of dopant into semiconductor region {12}
518.~.~ Of compound semiconductor {3}
519  DF  .~.~.~> Including multiple implantation steps {2}
522  DF  .~.~.~> Including heat treatment
523  DF  .~.~.~> And contact formation (i.e., metallization)

DEFINITION

Classification: 438/518

Of compound semiconductor:

(under subclass 514) Process wherein the semiconductive region into which the electrically active dopant is implanted is a compound semiconductor.