US PATENT SUBCLASS 438 / 519
.~.~.~ Including multiple implantation steps

Current as of: June, 1999
Click HD for Main Headings
Click for All Classes

Internet Version by PATENTEC © 1999      Terms of Use


438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

510  DF  INTRODUCTION OF CONDUCTIVITY MODIFYING DOPANT INTO SEMICONDUCTIVE MATERIAL {7}
514  DF  .~ Ion implantation of dopant into semiconductor region {12}
518  DF  .~.~ Of compound semiconductor {3}
519.~.~.~ Including multiple implantation steps {2}
520  DF  .~.~.~.~> Providing nondopant ion (e.g., proton, etc.)
521  DF  .~.~.~.~> Using same conductivity-type dopant

DEFINITION

Classification: 438/519

Including multiple implantation steps:

(under subclass 518) Process having plural steps of implanting ions, at least one step of which introduces an electrically active dopant ion, into a compound semiconductive substrate.